제23회 한국반도체학술대회(KCS 2016)::The 23rd Korean Conference on Semiconductors::

Final Program

2월 22일 (월)

2월 22일(월)	Room A	Room B
2월 22일(월)	태백룸(5층)	함백룸(5층)
14:00-18:00	[Short Course 1] 3차원 집적 기술: 원리와 응용	[Short Course 2] 차세대 저전력소자의 개발과 설계

2월 23일 (화)

2월 23일(화)

Room A

Room B

Room C

Room D

Room E

Room F

Room G

Room H

Room I

Room J

Room K

Room L

5층

6층

5층

태백I

태백II+III

함백I

함백II+III

컨벤션홀L

봉래I

봉래II+III

육백I

육백II

청옥I

청옥II+III

로비

08:30-10:30

[TA1-L]

[TB1-D]

[TC1-F]

[TD1-G]

[TF1-I]

[TG1-F]

[TH1-J]

CDC

[TJ1-K]

[TK1-R]

Chip
Design
Contest
& 전시

Analog
Design I

1D/2D
Materials
&
Devices

Novel Si
Devices
and
Integrated
Circuits (4)

Device
Physics and
Characte-
rization
1 :Field-
effect
transistors,
thin-film
transistors,
and 3D
inverter

High
efficiency
sensors
and
devices

Novel Si
Devices
and
Integrated
Circuits (1)

Nano-
fabrication
for
Application

Memory
processing
and RRAM
operation

Interaction
of system
SW and
semi-
conductor

10:30-10:40

휴식 (& 커피, 다과)

10:40-12:40

[TA2-L]

[TB2-D]

[TC2-M]

[TD2-G]

[TF2-O]

[TG2-F]

[TH2-J]

[TJ2-K]

[TK2-R]

Analog
Design II

Oxide
Semi-
conductors

RFIC
and smart
RFID
tags

Reliability
Analysis :
Thin-film
transistors
and field-
effect
transistors

VLSI
System
Design
for
Communi-
cations

Novel Si
Devices
and
Integrated
Circuits (2)

Nano-
fabrication
for
Application

NAND,
PCRAM,
and
MRAM

Little more
faster, and
even
better
reliability

12:40-13:40

점심 [포레스트볼룸 / 4층]

13:40-14:20

기조강연 1 : Prof. Akira Toriumi (The University of Tokyo)
"Materials Innovation for Versatile Electron Devices in IoT Era"
[컨벤션홀 K+W / 5층]

14:20-15:00

기조강연 2 : 박재근 교수 (한양대학교)
" Nonvolatile Memory Tech-nology beyond 20nm : Dilemma & Challenge"
[컨벤션홀 K+W / 5층]

15:00-15:10

휴식 (& 커피, 다과)

15:10-17:10

[TA3-A]

[TB3-D]

[TC3-H]

[TD3-G]

[TF3-Q]

[TG3-F]

[TH3-J]

[TI1-N]

[TJ3-K]

[TK3-E]

A2:
Enabling
packaging
tech-
nologies

Process
Tech-
nology
for Thin
Films

Display
and
Imaging
Tech-
nologies

Device
Modeling
and
Simulation
1 : RF,
teraherz,
low-power,
and novel
devices

Metrology
and
Inspection I

Novel Si
Devices
and
Integrated
Circuits (3)

Advances
in Design
Tech-
nology

Advanced
GaN
Tech-
nology

17:10-18:30

포스터
세션1
[TP1]

18:30-20:00

만찬 [컨벤션홀 K+W / 5층]

20:00-

Rump Session 1 : 스케일링 한계 극복을 위한 미래 반도체 기술 [태백룸 / 5층]
Rump Session 2 : 초연결 사회의 반도체 기술 전망과 과제 [함백룸 / 5층]

2월 24일 (수)

2월 24일(수)

Room A

Room B

Room C

Room D

Room E

Room F

Room G

Room H

Room I

Room J

Room K

Room L

5층

6층

5층

태백I

태백II+III

함백I

함백II+III

컨벤션홀L

봉래I

봉래II+III

육백I

육백II

청옥I

청옥II+III

로비

08:30-10:00

[WA1-A]

[WB1-D]

[WC1-C]

[WD1-G]

[WF1-Q]

[WG1-F]

[WH1-J]

[WI1-N]

[WJ1-K]

[WK1-E]

전시

A1: Contact
and thin
film tech-
nologies
for high
performance
interconnect

Thin
Films for
Emerging
Devices I

Materials
Growth &
Characte-
rization :
Emerging
new
electrical
materials

Device
Physics
and
Characte-
rization 2 :
Memory
devices

Metrology
and
Inspection
II

Materials
and
Processing
Tech-
nologies

Two-
Dimensional
Materials
beyond
Graphene

Architecture
-Level
Design
Techniques

Uncon-
ventional
approa-
ches
in memory
research

GaN
Power
Device

10:00-10:10

휴식 (& 커피, 다과)

10:10-11:40

[WA2-A]

[WB2-D]

[WC2-C]

[WD2-G]

[WF2-O]

[WG2-F]

[WH2-J]

[WI2-B]

[WJ2-P]

[WK2-E]

A3: Novel
interconnect
and
packaging
tech-
nologies for
emerging
electronics

Thin
Films for
Emerging
Devices II

Materials
Growth &
Characte-
rization : III-
Nitrides
and Si

Device
Modeling
and
Simulation
2 :
Ab-initio
and
theor-
etical
study

VLSI
System
Design
and
Appli-
cations

Si and
Group-IV
Photonics

Two-
Dimensional
Materials /
Spintro-nics

Patterning

Device for
Energy
(Solar
Cell,
Power
Device,
Battery,
etc.)

III-V
Device

11:40-13:00

포스터
세션2
[WP1]

13:00-

점심 [포레스트볼룸 / 4층]