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Short Course 1
³¯Â¥: 2016³â 2¿ù 22ÀÏ (¿ù) 14:00~18:00 Àå¼Ò: Źé·ë (5F)
3Â÷¿ø ÁýÀû ±â¼ú: ¿ø¸®¿Í ÀÀ¿ë
Organizer & Chair
ÀÌÈÄÁ¤ ±³¼ö (¼º±Õ°ü´ëÇб³)
Speakers
±è»ç¶óÀº°æ ±³¼ö (¼­¿ï°úÇбâ¼ú´ëÇб³)
3Â÷¿ø ÁýÀû ¹× ÆÐÅ°Áö ¼Ò°³
  
ÃÖ±¤¼º ¹Ú»ç (ETRI)
TSV ¼³°è ±â¼ú°ú ÀÀ¿ë (µðÁöÅÐ ¹× RF Áß½É)
  
Short Course 2
³¯Â¥: 2016³â 2¿ù 22ÀÏ (¿ù) 14:00~18:00 Àå¼Ò: ÇÔ¹é·ë (5F)
Â÷¼¼´ë ÀúÀü·Â¼ÒÀÚÀÇ °³¹ß°ú ¼³°è
Organizer & Chair
Àü»óÈÆ ±³¼ö (°í·Á´ëÇб³)
Speakers
Ãֿ쿵 ±³¼ö (¼­°­´ëÇб³)
Theory and research trend of tunnel field-effect transistors.
  
Á¶¹ÎÈñ ¼ö¼® (»ï¼ºÀüÀÚ)
Leakage reduction technologies including DRAM transistor.
  
À̺´ÈÆ ±³¼ö (GIST)
¹Ì·¡ ÃÊÀúÀü·Â¼ÒÀÚ ¹× ¾ÆÅ°ÅØÃÄ