Short Course 1 ³¯Â¥: 2016³â 2¿ù 22ÀÏ (¿ù) 14:00~18:00 Àå¼Ò: Źé·ë (5F) |
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3Â÷¿ø ÁýÀû ±â¼ú: ¿ø¸®¿Í ÀÀ¿ë | ||
Organizer & Chair |
ÀÌÈÄÁ¤ ±³¼ö (¼º±Õ°ü´ëÇб³)
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Speakers | ±è»ç¶óÀº°æ ±³¼ö (¼¿ï°úÇбâ¼ú´ëÇб³)
3Â÷¿ø ÁýÀû ¹× ÆÐÅ°Áö ¼Ò°³ |
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ÃÖ±¤¼º ¹Ú»ç (ETRI)
TSV ¼³°è ±â¼ú°ú ÀÀ¿ë (µðÁöÅÐ ¹× RF Áß½É) |
Short Course 2 ³¯Â¥: 2016³â 2¿ù 22ÀÏ (¿ù) 14:00~18:00 Àå¼Ò: ÇÔ¹é·ë (5F) |
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Â÷¼¼´ë ÀúÀü·Â¼ÒÀÚÀÇ °³¹ß°ú ¼³°è | ||
Organizer & Chair | Àü»óÈÆ ±³¼ö (°í·Á´ëÇб³)
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Speakers | Ãֿ쿵 ±³¼ö (¼°´ëÇб³)
Theory and research trend of tunnel field-effect transistors. |
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Á¶¹ÎÈñ ¼ö¼® (»ï¼ºÀüÀÚ)
Leakage reduction technologies including DRAM transistor. |
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À̺´ÈÆ ±³¼ö (GIST)
¹Ì·¡ ÃÊÀúÀü·Â¼ÒÀÚ ¹× ¾ÆÅ°ÅØÃÄ |