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Home 프로그램 > Program at a Glance
Time Room A Room B Room C Room D Room E Room F Room G Room H Room I Room J
창의관 하나스퀘어
106 110 116 117 B113 B114 B112 B115 아뜨리움 B116
14:00
-
18:00		 　 　 Short
Course 1		 Short
Course 2		 　 　 　 　 　 　
Time Room A Room B Room C Room D Room E Room F Room G Room H Room I Room J
창의관 하나스퀘어
106 110 116 117 B113 B114 B112 B115 아뜨리움 B116
09:30
-
11:00		 [TA1-M] [TB1-P] [TC1-L] [TD1-H] [TE1-E] [TF1-D] [TG1-F] [TH1-A]
A
F
H
L
M
P
분과
Si-Based
mm-Wave and
Optoelec-
tronic
Circuits		 Photo-
voltaics		 Analog-to-
Digital
Converter		 Organic TFT Various
Compound
Semicon-
ductors
I		 Thin Film Transistor Device
Tech-
nology
for Advanced
Materials and
Devices		 구리 배선
기술
　
11:00
-
11:20		 Coffee Break
11:20
-
12:35		 [TA2-M] [TB2-P] [TC2-L] [TD2-H] [TE2-E] [TF2-D] [TG2-F] [TH2-A]
CMOS RF
Device and
Circuit
Solutions		 Device Charac-
teristics		 Advanced Analog Techniques OLED Various Compound Semicon-
ductors II		 Resistive Memory Integration
Tech-
nology for
Advance
Materials and
Devices		 탄소
배선 및
TSV
12:35
-
13:30		 　 　
Lunch
13:30
-
14:00		 개회식 [과학도서관 강당(5층)]
14:00
-
14:40		 Plenary Talk 1 [과학도서관 강당(5층)]
14:40
-
15:20		 Plenary Talk 2 [과학도서관 강당(5층)]
15:20
-
15:40		 Coffee Break
15:40
-
17:10		 Rump Session [과학도서관 강당(5층)]
17:30
-
19:00		 만찬
Time Room A Room B Room C Room D Room E Room F Room G Room H Room I Room J
창의관 하나스퀘어
106 110 116 117 B113 B114 B112 B115 아뜨리움 B116
09:30
-
11:00		 [FA1-H] [FB1-K] [FC1-O] [FD1-B ] [FE1-E] [FF1-D] [FG1-G] [FH1-A]
D
I
J
N
Q
분과

　
Display
& TFT		 Memory
Design
Tech-
nologies		 Multi-
media
SoCs		 Patterning
(Litho & Etch)		 Electronics
Devices
and
Processes
I		 Device
and
Charac-
terization Tech-
nology
 Modeling
and
Simulation
I		 패키징
세션 I
　
11:00
-
11:20		 Coffee Break
11:20
-
12:35		 [FA2-Q] [FB2-K] [FC2-O] [FD2-J] [FE2-E] [FF2-D] [FG2-G] [FH2-A]
Q I Phase
Change
Memories
 Digital
VLSI
Circuits
and
Systems		 Graphene
and
Carbon
Related
Nano-
structures		 Electronics
Devices
and
Processes
II		 Thin Film
Deposition		 Modeling
and
Simulation
II		 패키징
세션 II
12:35
-
13:40		 　　 　 　　　
Lunch
13:40
-
15:10		 [FA3-Q] [FB3-K] [FC3-N] [FD3-J] [FE3-I] [FF3-C] [FG3-G] [FH3-A]
B
C
E
G
K
O
분과
Q II Resitive
Switching
Memories
 Innovative
Ideas in
System-
Level
Designs		 Nano-
materials
and Energy
Conversion
Processes
 Bio Sensors &
Optical
MEMS		 Wide Bandgap Materials Device
Perfor-
mance
& Reliability
Issues		 디스
플레이용
배선 및
TCO
　 　
15:10
-
15:30		 Coffee Break
15:30
-
16:45		 [FA4-Q] [FB4-K] [FC4-N] [FD4-J] [FE4-E] [FF4-C] [FG4-G] [FH4-A]
Q Ⅲ FLASH
Memories
and New
Memory
Tech-
nologies		 State-of-
the-art
Low
Power
SoC Design
Methods		 Soft Electronics:
Materials, Processes and
Devices		 Electronics
Devices
and
Processes
III		 Device
Charac-
terization		 Device
Charac-
terization		 배선용
원자층
증착공정
각 세션명을 클릭하시면 발표논문을 보실 수 있습니다.
세션기호 보는 방법
  요일 세션룸 세션순서 분과
Ex) TA1-M
T: 목요일
F: 금요일
A: Room A
B: Room B
C: Room C
D: Room D
E: Room E
F: Room F
G: Room G
H: Room H
1: 첫번째 세션
2: 두번째 세션
3: 세번째 세션
4: 네번째 세션
A  Interconnect & Package 분과
B  Patterning 분과
C  Materials Growth & Characterization 분과
D  Thin Film Process Technology 분과
E  Compound Semiconductors 분과
F  Silicon Device and Integration Technology 분과
G  Device & Process Modeling, Simulation and Reliability 분과
H  Display and Imaging Technologies 분과
I  MEMS & Sensors 분과
J  Nano-Science & Technology 분과
K  Memory (Design & Process Technology) 분과
L  Analog Design 분과
M  RF Design 분과
N  VLSI CAD 분과
O  System LSI Design 분과
P  Device for Energy 분과
Q  Metrology, Inspection, and Yield Enhancement 분과