Time |
Room A |
Room B |
Room C |
Room D |
Room E |
Room F |
Room G |
Room H |
Room I |
Room J |
Room K |
Room L |
104 |
105 |
106 |
107 |
108 |
114+115 |
109 |
110 |
111 |
113 |
102+103 |
·Îºñ |
09:00
-
10:30 |
90' |
[TA1-A]
Emer-
ging
Inter-
connect
Techno-
logy |
[TB1-H]
Display
and
Imaging
Techno-
logies |
[TC1-G]
Device
varia-
bility
and
reli-
ability |
[TD1-D]
Memory
Thin-
Film
Techno-
logies |
[TE1-K]
RRAMs,
mem-
ristors,
and
MRAMs |
¡¡ |
[TG1-F]
Emer-
ging
Devices
(1) |
[TH1-C]
Growth
and
Charac-
teriza-
tion
of
Gra-
phene/
Nitrides |
[TI1-J]
³ª³ë ±¸Á¶
9:30
–
10:30 |
[TJ1-R]
Semicon-
ductor Software 1 |
[TK1-M]
RF
Circuit
Blocks
and
Systems |
Àü½Ã |
10:30
-
12:10 |
100' |
¡¡¡¡¡¡¡¡¡¡ |
[TP1]
Æ÷½ºÅÍ
¼¼¼Ç 3 |
¡¡ |
12:10
-
13:10 |
60' |
Á¡½É |
13:10
-
14:40 |
90' |
[TA2-A]
Barriers
for
CuInter-
con-
nect
|
[TB2-H]
Display
and
Imaging
Techno-
logies |
[TC2-G]
Device physics
and
charac-
terization
2 |
[TD2-D]
Oxide Semicon-
ductor &
2D
Dichal-cogenide
Thin-
Film
Tran-
sistor Techno-
logies |
[TE2-K]
PCRAMs,
SRAMs,
TFET
and
NEM
memories |
¡¡ |
[TG2-F]
Emer-
ging
Devices
(2) |
[TH2-C]
III-Vs
and
SiGe for
Elec-
tronic
Devices |
[TI2-J]
Graphene & 2D
13:10
–
14:25 |
[TJ2-R]
Semicon-
ductor Software
II |
[TK2-M]
CMOS
RF Device
and
Circuit
Solutions |
14:40
-
14:50 |
10' |
ÈÞ½Ä (& Ä¿ÇÇ, ´Ù°ú) |
14:50
-
16:20 |
90' |
[TA3-A]
Con-
ductors, Con-
tacts
and
Low-k Dielec-
trics |
[TB3-L]
Analog
Design |
[TC3-G]
RF and Terahertz
Devices |
[TD3_D]
Device & Process
Thin
Film Techno-
logies |
[TE3-K]
RRAM
and
FLASH
device,
modeling,
and
process
Techno-
logies |
¡¡ |
[TG3-F]
Pro-
cesses and
test metho-
dologies for
scaled CMOS |
[TH3-Q]
Metro-
logy,
Inspec-
tion,
and
Yield
Enhan
-cement |
[TI3-J]
Graphene
& 2D
14:50
-
15:50 |
[TJ3-R]
Semicon-
ductor
Software
III |
¡¡ |