제22회 한국반도체학술대회(KCS 2015)::The 22nd Korean Conference on Semiconductors::

Home 프로그램 > Program at a Glance

2월 10일(화)

Time		Room A	Room B	Room C	Room D
Time		104+105	107+108	116	117
14:00 - 17:00	180'	Short Course 1	Short Course 2	Short Course 3	Short Course 4

2월 11일(수)

Time

Room A

Room B

Room C

Room D

Room E

Room F

Room G

Room H

Room I

Room J

Room K

Room L

104

105

106

107

108

114+115

109

110

111

113

102+103

로비

09:00
-
10:30

90'

[WA1-A]

TSV &
Micro-
bump

[WB1-B]

Patter-
ning

[WC1-G]

Device
modeling
and
simul-
ation

[WD1-N]

VLSI
Design &
Auto-
mation

[WE1-E]

Material
charac-
teristic

[WG1-O]

VLSI Systems
and
Appli-
cations

[WH1-I]

Physical
Sensor
System

[WI1-J]

에너지

CDC

Chip
Design
Contest

전시

10:30
-
10:40

10'

휴식 (& 커피, 다과)

10:40
-
12:00

100'

[WP1]

포스터
세션 1

12:00
-
13:00

60'

점심 (& 상임운영위원회)

13:00
-
14:30

90'

[WA2-A]

Flip-chip,
Solar,
& LED
Package

[WB2-B]

Patter-
ning

[WC2-G]

Device
physics
and charac-
terization 1

[WD2-N]

System
Level
Design
& Test

[WE2-E]

Device
&
Circuit

[WG2-P]

Device
for
Energy

[WH2-I]

Chemical-
Bio
Sensor System

[WI2-J]

메모리
소자,
나노
융합/유연
소자

CDC

14:30
-
14:40

10'

휴식 (& 커피, 다과)

14:40
-
16:00

100'

[WP2]

포스터
세션 2

16:00
-
16:40

40'

기조강연 1 : Tesuo Endoh (Tohoku University, Japan)
“Future Memory Technology with Vertical MOSFET and STT-MRAM for Ultra Low Power Systems”

16:40
-
17:20

40'

기조강연 2 : 황성우 전무 (삼성종합기술원)
“Device Application Aspects of Graphene and Wafer Scale Growth of Single-Crystal Graphene on Germanium“

17:20
-
20:00

반도체인의 밤 (개회식 & Reception)

2월 12일(목)

Time

Room A

Room B

Room C

Room D

Room E

Room F

Room G

Room H

Room I

Room J

Room K

Room L

104

105

106

107

108

114+115

109

110

111

113

102+103

로비

09:00
-
10:30

90'

[TA1-A]

Emer-
ging
Inter-
connect
Techno-
logy

[TB1-H]

Display
and
Imaging
Techno-
logies

[TC1-G]

Device
varia-
bility
and reli-
ability

[TD1-D]

Memory
Thin-
Film
Techno-
logies

[TE1-K]

RRAMs,
mem-
ristors,
and
MRAMs

[TG1-F]

Emer-
ging
Devices
(1)

[TH1-C]

Growth
and
Charac-
teriza-
tion
of
Gra-
phene/
Nitrides

[TI1-J]

나노 구조

9:30
–
10:30

[TJ1-R]

Semicon-
ductor Software 1

[TK1-M]

RF
Circuit
Blocks
and
Systems

전시

10:30
-
12:10

100'

[TP1]

포스터
세션 3

12:10
-
13:10

60'

점심

13:10
-
14:40

90'

[TA2-A]

Barriers
for
CuInter-
con-
nect

[TB2-H]

Display
and
Imaging
Techno-
logies

[TC2-G]

Device physics
and
charac-
terization
2

[TD2-D]

Oxide Semicon-
ductor &
2D
Dichal-cogenide
Thin-
Film
Tran-
sistor Techno-
logies

[TE2-K]

PCRAMs,
SRAMs,
TFET
and
NEM
memories

[TG2-F]

Emer-
ging
Devices
(2)

[TH2-C]

III-Vs
and
SiGe for
Elec-
tronic
Devices

[TI2-J]

Graphene & 2D

13:10
–
14:25

[TJ2-R]

Semicon-
ductor Software
II

[TK2-M]

CMOS
RF Device
and
Circuit
Solutions

14:40
-
14:50

10'

휴식 (& 커피, 다과)

14:50
-
16:20

90'

[TA3-A]

Con-
ductors, Con-
tacts
and
Low-k Dielec-
trics

[TB3-L]

Analog Design

[TC3-G]

RF and Terahertz
Devices

[TD3_D]

Device & Process
Thin
Film Techno-
logies

[TE3-K]

RRAM
and
FLASH
device,
modeling,
and
process
Techno-
logies

[TG3-F]

Pro-
cesses and
test metho-
dologies for
scaled CMOS

[TH3-Q]

Metro-
logy,
Inspec-
tion,
and
Yield
Enhan
-cement

[TI3-J]

Graphene
& 2D

14:50
-
15:50

[TJ3-R]

Semicon-
ductor
Software
III