강연일자: 2020년 2월 13일(목)
Cambridge Univ., UK
Florin Udrea is a professor in semiconductor engineering and head of the High Voltage Microelectronics and Sensors Laboratory at University of Cambridge. He received his BSc degree from Politehnica University of Bucharest in 1991, his Master degree in sensors from Warwick University, UK in 1992 and his PhD degree in power devices from the University of Cambridge, Cambridge, UK, in 1995. Since October 1998, Prof. Florin Udrea has been an academic with the Department of Engineering, University of Cambridge, UK. Between August 1998 and July 2003 he was an advanced EPSRC Research Fellow and prior to this, a College Fellow in Girton College, University of Cambridge. He is currently leading a research group in power semiconductor devices and solid-state sensors that has won an international reputation during the last 25 years. Prof. Udrea has published over 450 papers in journals and international conferences. He holds over 100 patents with 20 more patent applications in power semiconductor devices and sensors. Prof. Florin Udrea founded five companies, Cambridge Semiconductor (Camsemi) in power ICs - sold to Power Integrations, Cambridge CMOS Sensors (CCS) in the field of smart sensors - sold to ams, Cambridge Microelectronics in Power Devices, Cambridge GaN Device in high voltage GaN technology and Flusso in Flow and temperature sensors. Prof. Florin Udrea is a board director in Cambridge Enterprise. For his ‘outstanding personal contribution to British Engineering’ he has been awarded the Silver Medal from the Royal Academy of Engineering. In 2015 Prof. Florin Udrea was elected a Fellow of Royal Academy of Engineering. In 2018 Prof. Udrea has been awarded several major prizes, including the Mullard medal from the Royal Society.
The power devices field has seen tremendous changes in the last decade. The traditional power MOSFET has been largely replaced by a new class of power devices based on the Silicon Sueprjunction concept, while the Insulated Gate Bipolar Transistors (IGBTs) are now fabricated on 12 inch wafers and have access to the latest thin wafer/trench/fine dimension technologies. However most of the innovation and flavor in the field comes from the emergence of Wide Band Gap semiconductors - and in particular the Gallium Nitride and Silicon Carbide. Extensive research is also carried out in single crystal Diamond and Gallium Oxide materials. The market of power devices has reached $30M with steady growth in silicon but exponential growth in wide bandgap materials reaching CAGRs in excess of 30% in the next 3-5 years. This talk will cover a range of wide bandgap semiconductor technologies and materials for power devices and give a comparison between different technologies and materials for diverse power electronics applications. New Figures of Merit (FOMs) will be defined for the materials and technologies of power devices. The talk will end with an outline of the challenges for the power electronics future and a vision of different technologies for the next 10 years.
Dr. Myung-Hee Na is the Vice President of Technology Solutions and Enablement at imec. She is currently responsible for CMOS technology research for advanced CMOS and AI technology. After completing her Ph.D in Physics, Dr. Na started her career at IBM in 2001, where she held various technical, managerial and executive roles until early 2019. During that time, she was promoted to Distinguished Engineer and Technical Executive. At IBM Research, she successfully led Research and Development for multiple generations of semiconductor technologies, including high-K metal gate, FinFET, and Nanosheet development. She received several Outstanding Technical Achievement Awards for her technical contributions. Moreover, she has co-authored numerous research papers and holds several U.S. and international patents.
CMOS technology has been a remarkable success story of disruptive innovations spanning the fields of material sciences, device physics, and circuit design. For the last few years, the evolution from planar CMOS devices to FinFET has enabled a new era of scaled CMOS technologies. Yet again, disruptive innovations beyond these architectures are now required to maintain scaling and drive innovation beyond the 3nm technology node. Furthermore, next-generation computing presents new opportunities in semiconductor technologies. We would like to share our vision to help shape the semiconductor landscape during the next 10 years
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