지난 2년여간 코로나19로 인해 우리는 많은 어려움을 겪었습니다. 하지만 스마트폰과 데이터센터에 들어가 있는 다양한 반도체 덕에 우리는 시간과 장소에 구애받지 않고 소중한 인연을 이어나갈 수 있었습니다. 또한 가상 현실 등 공상과학으로 느껴졌던 미래가 일상이 되어 생활방식 자체가 바뀌는 시대에 접어 들었습니다. 앞으로 IT 기기와 기술은 지금까지와 전혀 다른 차원의 새로운 접근 방식을 필요로 할 것입니다. 더 높은 수준의 고사양 반도체가 요구되면서 반도체 개발 또한 기존 개념을 뛰어넘는 혁신을 요구하게 됩니다. 한편 지속가능한 미래를 준비하기 위한 세계적 노력도 계속되고 있습니다. 친환경 패러다임 전환은 많은 전기와 화학물질을 사용하는 반도체 업계에겐 커다란 도전 과제이지만, 인류 당면 과제인 환경위기 해결에 기여하기 반드시 필요한 활동으로 인식되고 있습니다. 반도체 수요 증가와 성능 개선 요구, 그리고 지속 가능한 미래를 준비하기 위해 앞으로 어떠한 도전 과제들이 기다리고 있으며, 이를 해결하기 위해 어떠한 노력이 필요한지 말씀 드리고자 합니다.

학력

서울대학교 반도체공학 박사 (1996)
서울대학교 반도체공학 석사 (1992)
KAIST 전기전자공학 학사 (1990)

경력

[現] 삼성전자 DS부문 반도체연구소장 (2022.6 - 현재)
[前] 삼성전자 메모리 Flash개발실장 (2021)
삼성전자 메모리 Flash개발실 Flash PA팀장 (2017)
삼성전자 메모리 SCS법인 (2015)
삼성전자 메모리 Flash개발실 Flash PA팀 (2006)
삼성전자 메모리 차세대연구2팀 (2005)
삼성전자 메모리 SRAM/Flash PA팀 (2004)
삼성전자 DRAM PA팀 (2000)
삼성전자 M-Technology팀 (1999)
삼성전자 TD팀 (1996)

The rapid growth of technologies such as machine learning, internet of things, and autonomous vehicles is fueling a need for more powerful electronic chips, and the semiconductor industry is working to meet this need with ever-more complex nanoscale device structures. With the growing demands on nanostructure fabrication, next-generation patterning becomes increasingly challenging. One approach to advanced patterning is selective deposition, a technique that is gaining attention as an important process to achieve pattern features at the sub-10 nm length scale. This bottom-up growth strategy provides advantages in reduced process complexity and improved pattern fidelity. This talk will introduce the method of area selective atomic layer deposition (AS-ALD) and will cover a range of strategies to achieve AS-ALD. Examples of selective deposition processes for different technologically important materials will be described, using selectivity as a key figure of merit. The talk will conclude with discussion of the opportunities and challenges for selective deposition to drive semiconductor device fabrication over the next few years.

Stacey F. Bent is the Jagdeep and Roshni Singh Professor at Stanford University, where she is Professor of Chemical Engineering and Professor, by courtesy, of Chemistry, of Materials Science and Engineering, and of Electrical Engineering. She also currently serves as Vice Provost for Graduate Education and Postdoctoral Affairs. Bent obtained her B.S. degree in chemical engineering from UC Berkeley and her Ph.D. degree in chemistry from Stanford, and she was a postdoctoral fellow at AT&T Bell Laboratories. Bent’s research interests are in the understanding of surface chemistry and materials synthesis and the application of this knowledge to a variety of problems in sustainable energy, semiconductor processing, and nanotechnology. Her group’s research on atomic layer deposition (ALD) ranges from fundamental mechanistic studies, to area selective ALD, to applications in solar cells, fuel cells, catalysts, and batteries. Bent has published over 300 peer-reviewed papers, holds 6 patents, and has presented over 330 invited talks. She has supervised 50 Ph.D. students and 25 postdoctoral scholars. Bent was elected to the U.S. National Academy of Engineering in 2020. She is also a Fellow of the American Chemical Society (ACS) and the American Vacuum Society (AVS). She is the recipient of the 2018 ACS Award in Surface Chemistry, the 2020 SRC Technical Excellence Award, and the 2021 ALD Innovator Award, the highest recognition in the ALD community. In 2021, she also was honored with the Braskem Award for Excellence in Materials Engineering and Science from the American Institute of Chemical Engineers (AIChE).