Short Course

Analog Front-End Design Techniques for Robust Health Monitoring and Biosensing

• 제민규 교수

  KAIST

  Biography

  	Analog Front-End Design Techniques for Robust Health Monitoring and Biosensing 제민규 교수 KAIST	x
  학력 KAIST 전기및전자공학과 학사 (1992.3 - 1996.2) KAIST 전기및전자공학과 석사 (1996.3 - 1998.2) KAIST 전기및전자공학과 박사 (1998.3 - 2003.8) 경력 삼성전자 책임연구원 (2003.6 - 2006.4) Institute of Microelectronics, Singapore, Senior Research Engineer (2006.6 - 2008.3) Institute of Microelectronics, Singapore, Principal Investigator (2008.4 - 2012.3) Institute of Microelectronics, Singapore, Department Head(2012.4 - 2014.2) National University of Singapore, Adjunct Assistant Professor (2010.7 - 2014.2) DGIST 정보통신융합공학전공 부교수 (2014.3 - 2016.2) KAIST 전기및전자공학부 부교수 (2016.2 - 현재) 연구분야 지능형 센서 인터페이스 집적회로 설계 저전력 무선 통신 집적회로 설계 고효율 전력 공급/관리 집적회로 설계 초소형 의료기기, 뇌-기계 인터페이스, 사물인터넷 등을 위한 마이크로시스템 융합

반도체-바이오 융합 유전자 진단제품 개발 스토리

• 최경학 이사

  OPTOLANE Technologies, Inc.

  Biography

  	반도체-바이오 융합 유전자 진단제품 개발 스토리 최경학 이사 OPTOLANE Technologies, Inc.	x
  학력 서울대학교 나노융합IP최고전략과정 수료 (2015.8 - 2016.2) 공학박사, Electrical Engineering, University of Texas at Dallas (2009.6 - 2012.5) 공학석사, Electrical Engineering, University of Texas at Dallas (2007.1 - 2009.5) 공학사, 서울대학교 전기공학부 (2000.9 ~ 2003.2) 이학사, 서울대학교 지질과학 (부전공 : 물리학) (1990.3 - 1994.2) 경력 CTO, ㈜옵토레인 (2014.12 - 현재) - CMOS Photosensor기반 Real-Time PCR 플랫폼 기술 및 제품 개발 책임연구원, ㈜실리콘화일 (2012.7 - 2014.11) - Bio 진단장치를 위한 CMOS 기반 형광검출 연구 및 개발 - 동물 세포 실시간 배양 및 모니터링 시스템 광학부 개발 연구조교,The University of Texas at Dallas (2007.1 - 2012.5) - MEMS based Photonic Crystal Design, Fabrication, and Characterization - Capacitive RF MEMS Switch Driver IC Design and Characterization 주임연구원, 부설연구소, (주)실리콘화일 (2005.10 - 2006.11) - CMOS Image Sensor 설계 연구원, Display Driver IC 개발팀, (구)하이닉스/매그나칩 반도체 (2003.2 - 2005.9) - Displsy Driver IC 설계 연구분야 Implementation of real-time PCR on a Chip Principles of digital real-time PCR Fluorescence detection methods

산화갈륨 전력반도체 연구동향

• 경신수 연구소장

  파워큐브세미

  Biography

  	산화갈륨 전력반도체 연구동향 경신수 연구소장 파워큐브세미	x
  학력 고려대학교 전기전자전파공학부 학사 (2006) 고려대학교 전기전자공학과 석사 (2009) 고려대학교 전기전자공학과 박사 (2016) 경력 삼성전자 System LSI 선임연구원 (2009-2012) 파워큐브세미㈜ 연구소장 (2013-현재) 가천대학교 겸임교수 (2019-현재) 파워반도체상용화사업 기획위원 (2015-2017) 연구분야 전력반도체 설계 및 성능 개선 전력반도체 공정 SiC MOSFET / SiC Diode / Si Super Junction MOSFET 산화갈륨 Diode / 산화갈륨 Transistor

차세대 파워반도체를 위한 ESD 보호 기술

• 구용서 교수

  단국대학교

  Biography

  	차세대 파워반도체를 위한 ESD 보호 기술 구용서 교수 단국대학교	x
  학력 서강대학교 전자공학과 공학사 (1981) 서강대학교 전자공학과 공학석사 (1983) 서강대학교 전자공학과 공학박사 (1992) 경력 기획재정부 혁신성장추진기획단 자문위원 (2019 - 현재) 국가과학기술자문회의 운영위원 / 전문위원장 (2017 - 2019) 산업통상자원부 파워반도체상용화사업 총괄책임자 (2017 - 현재) LG전자 자문위원 (2017 - 2018) 산업통상자원부 반도체성장펀드 성장위원장 (2017 - 현재) 산업통상자원부 전략물자기술자문위원 (2017 - 현재) 대한전자공학회 회장 (2016) 한국전자통신연구원 자문위원 (2014) 한국전기전자학회 회장 (2013 - 2014) 단국대학교 전자전기공학부 교수 (2009 - 현재) 연구분야 ESD 보호회로, 파워반도체

화합물 반도체 게이트 드라이브 및 드라이브 IC

• 박기태 대표

  아이언디바이스

  Biography

  	화합물 반도체 게이트 드라이브 및 드라이브 IC 박기태 대표 아이언디바이스	x
  학력 서울대학교 전기공학과 석사 (1995.3 - 1997.2) 서울대학교 전기공학과 학사 (1991.3 - 1995.2) 경력 (주)아이언디바이스 대표 (2008.5 - 현재) 삼성전자 반도체 책임 (2003.5 - 2008.3) Fairchild Semiconductor 선임 (1995.5 - 2003.4) 삼성전자 반도체 대리 (1997.2 - 1999.4) 연구분야 전력전자 - 모터/스피커 드라이브 - 파워컨버터 혼재신호 반도체 - BCDMOS 공정기반 혼재신호 설계 - 파워 소자 및 게이트드라이브 - 고성능 아날로그 회로 및 DAC, ADC

화합물 전력반도체의 개발현황과 향후전망

• 장태훈 이사

  ㈜시지트로닉스

  Biography

  	화합물 전력반도체의 개발현황과 향후전망 장태훈 이사 ㈜시지트로닉스	x
  학력 Carnegie Mellon University, Materials Science & Eng., Ph.D. (2001) Carnegie Mellon University, Materials Science & Eng., M.S. (1997) 연세대학교 금속공학, 학사 (1993) 경력 시지트로닉스 이사 (2018 - 현재) 전북대학교 교수 (2015 - 2018) LG전자 수석연구원 (2008 - 2014) 삼성종합기술원 전문연구원 (2002 - 2008) ATMEL (USA), Principal researcher (2001 - 2002) 연구분야 High power GaN FET & SBD design & process development Ga2O3 SBD design & process development 빠른 충전속도와 크기가 중요한 소형 IT기기용 충전기 (핸드폰 및 태블릿)와 높은 효율과 안정성이 요구되는 전기자동차용 충전기에 적합한 화합물 전력반도체의 현재 개발현황을 소개하고 향후 전망에 대해 설명한다.

탄소 제로화 준비를 위한 차세대 파워반도체(SiC) 기술 및 산업 현황

• 정은식 부사장

  YPT

  Biography

  	탄소 제로화 준비를 위한 차세대 파워반도체(SiC) 기술 및 산업 현황 정은식 부사장 YPT	x
  학력 2007~2012 고려대학교 전기공학과 박사 경력 2017~현재 (주)예스파워테크닉스 CTO/부사장 2010~현재 전기전자재료학회 평위원 2015~현재 반도체디스플레이산업학회 기업이사 2009~2016 (주)메이플세미컨덕터 신사업본부 대표이사 2004~2009 (주)오카스 연구소 부소장 연구분야 - SiC 파워반도체 설계/제조 - SiC 파워반도체 응용기술 - 아날로그 IC 설계

• Prof. Jongho Lee

  Seoul National University

• Sorin Cristoloveanu Director of Research

  CNRS

Material Interfaces and the Constraints of Subnanometer EOT MOS Gate Dielectric Scaling

• Prof. Hei Wong

  City University of Hong Kong

  Biography

  	Material Interfaces and the Constraints of Subnanometer EOT MOS Gate Dielectric Scaling Prof. Hei Wong City University of Hong Kong	x
  Hei Wong received his Ph.D. in electrical and electronic engineering from the University of Hong Kong. He was a visiting professor for the 21st Century Centre of Excellent (COE21) for Photonics-Nanodevice Integration Engineering, Tokyo Institute of Technology, Japan, and Zhejiang University, China. Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor for Microelectronics Reliability (Elsevier) for 20 years and IEEE Transactions on Electron Devices for 9 years. He also served as a guest editor for many journals including IEEE Transactions on Nanotechnology, and Nanomaterials. He has been involved actively in IEEE Electron Device Society (EDS) with various roles including serving as a Regional Editor for IEEE EDS Newsletter during 2003-2009 and as a Distinguished Lecturer for IEEE EDS since 2002. Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 380 papers. He has presented many keynote speeches and invited talks and at numerous international conferences.

  Abstract

  	Material Interfaces and the Constraints of Subnanometer EOT MOS Gate Dielectric Scaling Prof. Hei Wong City University of Hong Kong	x
  High-dielectric constant (high-k) material has been considered as the only possible solution for the sub-nanometer thick EOT (silicon oxide equivalent thickness) gate dielectric for the nanoscale CMOS devices. However, because of the fundamental limitations, there are still many issues needed to be overcome or improved in order to further enhance the performances of the MOS devices on the ultimate scale. In this talk, the material properties of high-k dielectrics associated with the electronic structures, such as thermal stability, defects, and band structures, will be highlighted. Most of the instabilities of high-k materials are associated with the ionic nature of the metal-oxygen bondings. These issues can be resolved by using silicates, oxynitride, aluminates, or other complex forms of compounds or alloys. The physics of, and the issues related to, these types of high-k materials will be critically discussed. The major origins of MOS device instabilities and technological limitations on the subnanometer EOT scaling are governed by material interaction between the high-k/silicon substrate and the high-k/metal electrode interfaces. We shall examine the surface roughness issues, the interfacial bonding and strain at the interfaces, and their impacts on device characteristics.

Impact, History and Future of Nanoelectronics

• Prof. Hiroshi Iwai

  National Ming Yang Chiao Tung University, Tokyo Institute of Technology

  Biography

  	Impact, History and Future of Nanoelectronics Prof. Hiroshi Iwai National Ming Yang Chiao Tung University, Tokyo Institute of Technology	x
  Prof. Hiroshi Iwai was born in Tokyo, Japan and received B.E. and Ph.D. degrees from the University of Tokyo. He worked at Toshiba corporation from 1973 to 1999, developing NMOS, CMOS, BiCMOS, and mixed-signal LSI technologies and products. In 1999, he moved to Tokyo Institute of Technology and conducted nano CMOS research until 2020. In 2020, he received the Yushan Scholar title from the Taiwan government and worked at ICST, NCTU as a vice dean and distinguished chair professor. He is currently a Vice Dean and Distinguished Chair Professor, ICST, NYCU, Taiwan and a Professor Eemeritus, Tokyo Institute of Technology, Japan. His received awards include IEEE J.J. Ebers Award, Yamazaki Teiich Prize, IEEE Paul Rapapport Award, IEEE Cledo Brunetti Award, ECS Thomas Callinan Award, and ECS Gordon E. Moore Medal. He is a life fellow of IEEE, a life member and fellow of ECS, and a fellow of IEEJ, IEICE, and JSAP. He was the President of IEEE EDS, and the Director of IEEE Division I.

  Abstract

  	Impact, History and Future of Nanoelectronics Prof. Hiroshi Iwai National Ming Yang Chiao Tung University, Tokyo Institute of Technology	x
  Electronics was quite a new concept of technology which can treat information electrically for the first time in the human history, and opened modern intelligent electronic society. Micro/nanoelectronics was another new concept. The miniaturization of the electron devices of millions times by the micro/nanoelectronics technologies has given us tremendous improvement of billions ~ trillion times on the system and machine performance -- such on operational speed, energy consumption, size, and cost --. and opened today’s smart society. Progress of the micro-/nano-electronics has been accomplished by the downsizing. However, the downsizing is expected to reach the limit in 10 years. In this presentation, I will talk about the impact and history of micro/nanoelectronics, and explain the causes of the limit. Then, I will predict the near future of the nanoelectronics in the next 15 years. Finally, I will also talk about the nanoelectronics development for far future towards the 22nd century and beyond it.

Breakthrough in Semiconductor Technologies Enabled by Substrate Engineering

• Dr. Ionut Radu

  Soitec

  Biography

  	Breakthrough in Semiconductor Technologies Enabled by Substrate Engineering Dr. Ionut Radu Soitec	x
  Ionut Radu is Director of Research and External Collaborations being responsible for path finding and technology scouting at Soitec. He is currently involved with industrial and academic innovation platforms supporting strategic developments of advanced substrate materials for semiconductor industry. Dr. Radu obtained his B.S. in physics from University of Bucharest in 1999 and Ph.D (Dr. rer. nat.) in physics from Martin-Luther University Halle-Wittenberg in 2003. He has co-authored more than 80 papers in peer-reviewed journals, conference proceedings and reference handbooks and holds more than 70 patents in the field of semiconductor technologies. Dr. Radu is senior member of IEEE society and involved in Technical Program Committees of international conferences (ESSDERC, VLSI-TSA) and industrial forums (Semicon Europa).

  Abstract

  	Breakthrough in Semiconductor Technologies Enabled by Substrate Engineering Dr. Ionut Radu Soitec	x
  The innovation on advanced substrates reflects today’s new paradigm for semiconductor technologies. High performance electronic devices rely on co-optimization of technologies driven by a holistic understanding at system-level. Smart CutTM technology is a industry recognized standard for manufacturing of advanced nanoelectronics substrates such as RF-SOI, FD-SOI etc. In combination with other materials and technologies in the Soitec portfolio, Smart Cut enables any thin film materials to be transferred on top of any other materials while maintaining initial crystallographic properties. This provides the electronics industry with new opportunities for innovation and differentiation in growing and emerging fields including wireless communications, sensors, power electronics, 3D applications, smart devices, etc. In this work an overview of the recent advances in the development of substrate technologies for More Moore and More-than-Moore applications will be presented, including FD-SOI, RF-SOI, Piezo-on-insulator, SiC and other compound semiconductors.

Development of Integrated Circuit and Applications of SOI

• Prof. Jing Wan

  Fudan University

  Biography

  	Development of Integrated Circuit and Applications of SOI Prof. Jing Wan Fudan University	x
  Jing Wan received his Ph.D degree from University of Grenoble in 2012 with his research work done in the lab of IMEP-LAHC, supervised by Prof. Sorin Cristoloveanu. He received “excellent Ph.D thesis” award from Nanoscience Foundation in France. After, he joined “Globalfoundries Inc.” in NewYork state, and worked on 14nm FinFET VLSI fabrication technology development. In 2016, he was awarded with the “Chinese national thousand young talent” and joined Fudan University in Shanghai and received “Shanghai Rising Star” award in 2019. Currently, he works as a professor in Fudan University with his research interests focusing on novel semiconductor devices, photodetectors and sensors based on Silicon-On-Insulator (SOI) and 2D-materials.

  Abstract

  	Development of Integrated Circuit and Applications of SOI Prof. Jing Wan Fudan University	x
  This presentation elaborates the development of modern ICs along “More than Moore” and “More Moore” directions and applications of Silicon-On-Insulator (SOI) technology. In “More than Moore” direction, the challenges and solutions of transistors’ scaling down are reviewed from the perspective of device physics. SOI as one of the solutions is further discussed including its Pros/Cons. Novel devices based on SOI with low-subthreshold swing (SS) and compact memory effect are presented in details. SOI technology also shows great potentiality in “More than Moore” applications. Novel photodetectors and sensors based on SOI show enhanced performance and attractive functionalities. Eventually, heterogenous devices based on SOI/2D-material and their applications are briefly introduced.

Light Emitting Devices for Silicon Photonics

• Prof. Ray Hueting

  University of Twente

  Biography

  	Light Emitting Devices for Silicon Photonics Prof. Ray Hueting University of Twente	x
  Dr. Raymond J.E. Hueting obtained his Ph.D. degree in electrical engineering from Delft University, the Netherlands in 1997. After that he joined Philips Research to work on power and RF device modelling, design and characterization. In 2004 he joined the University of Twente (UT) and has been an associate professor since 2011. His main interest is physics of power semiconductor and CMOS devices, optical functions and packaging. He holds 35 U.S. patents in the field of power and RF devices and authored and co-authored over 100 papers. He received the Philips’ bronze medal (DOVO invention award) for his inventions. He is an IEEE Senior Member, and has been serving as a member of the technical program committee of the ISPSD, ESSDERC, and EDTM conferences.

  Abstract

  	Light Emitting Devices for Silicon Photonics Prof. Ray Hueting University of Twente	x
  Our daily life is strongly influenced by applications such as portable electronics, automotive (e.g., electric cars) and internet-of-things (IoT) devices. Those applications have to a great extent been made possible by the most advanced and standardized fabrication technology, i.e. silicon or CMOS technology. To satisfy the increasing demands for yet more integrated functionalities into CMOS, silicon photonics offers a great potential: the integration of photonic and sensing functionalities within an existing (standard) electronic CMOS platform. Despite the fact that silicon is a poor light emitter, it is crucial to have silicon light emitting diodes (LEDs) and photodiodes to make this successful. This presentation focusses on the design and physics of the silicon LED. It explains that the silicon LED can emit both near-infrared (~1100nm) and visible light (~600nm) and that this feature can be exploited, as is shown in an example of a functional optocoupler realized in a commercial smart-power silicon-on-insulator (SOI) technology.