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  • Organizer & Chair: ÃÖÁßÈ£ ±³¼ö(¼­¿ï½Ã¸³´ëÇб³)
  • ¿¬»ç1: ¾È±æÃÊ ±³¼ö(¼­°­´ëÇб³)
¹ßÇ¥ ÁÖÁ¦  µ¨Å¸½Ã±×¸¶ A/D º¯È¯±â °³¹ßµ¿Çâ
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 14:00~16:00
¹ßÇ¥ Àå¼Ò  Room A (¾Æ¶óȦ, º»°ü2Ãþ)
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• Introduction
• Overview of Delta-Sigma Data Converters
• Design Issues
• Design Examples
• Summary
  • ¿¬»ç2: ÀÌ°­À± ±³¼ö(¼º±Õ°ü´ëÇб³)
¹ßÇ¥ ÁÖÁ¦  Design Issues and Recent Trend of High Performance Phase-Locked Loop
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 16:00~18:00
¹ßÇ¥ Àå¼Ò  Room A (¾Æ¶óȦ, º»°ü2Ãþ)
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 • Introduction to Phase-Locked Loop
 • Basics of Phase Locked Loop
     - Basic Block Diagram
     - Characteristics of Building Blocks
     - Transfer Function
     - Noises in PLL
     - Frequency Multiplication
 • Design Issues of Phase Locked Loop
     - Low Phase Noise and Jitter
     - Low Power Consumption
     - Wide Tuning Range
     - Fast Settling Time
 • Recent Trend of Phase Locked Loop
     - High Performance PLL in Sub-Micron CMOS
     - Multi-Mode, Multi-Band (MMMB) PLL
     - All-Digital PLL (ADPLL)
     - Conclusion
  • Organizer & Chair: À¯±¤µ¿ »ó¹«(µ¿ºÎÇÏÀÌÅØ)
  • ¿¬»ç1: ¹ÚÀÏ¿ë ¹Ú»ç(µ¿ºÎÇÏÀÌÅØ)
¹ßÇ¥ ÁÖÁ¦  BCD (Bipolar-CMOS-DMOS) Technology Trends for Power Management IC
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 14:00~16:00
¹ßÇ¥ Àå¼Ò  Room B (¸¶·çȦ, º»°ü2Ãþ)
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1. Introduction
2. Basic concept of power device
3. Understanding LDMOS transistors
4. Application of power management IC
5. BCD technology trends for power management IC
6. Summary
  • ¿¬»ç2: ±èÁ¤ÁÖ ¼ö¼®¿¬±¸¿ø(µ¿ºÎÇÏÀÌÅØ)
¹ßÇ¥ ÁÖÁ¦  High Performance Analog Process
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 16:00~18:00
¹ßÇ¥ Àå¼Ò  Room B (¸¶·çȦ, º»°ü2Ãþ)
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1. Introduction
2. High performance Analog CMOS Components
3. High performance Analog CMOS Characteristics
4. Overview of High performance Analog CMOS process
5. Summary
  • Organizer & Chair: Á¶ÅÂÁ¦ ¸¶½ºÅÍ(»ï¼ºÀüÀÚ)
  • ¿¬»ç1: ±èÁ¤È£ ±³¼ö(KAIST)
¹ßÇ¥ ÁÖÁ¦  3D Integration ±â¼ú: Electrical Design of TSV and Interposer
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 14:00~16:00
¹ßÇ¥ Àå¼Ò  Room D (½ºÄ«ÀÌȦ, º»°ü2Ãþ)
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  • ¿¬»ç2: ±è±¸¼º ±³¼ö(°­³²´ëÇб³)
¹ßÇ¥ ÁÖÁ¦  3D TSV Application
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 16:00~18:00
¹ßÇ¥ Àå¼Ò  Room D (½ºÄ«ÀÌȦ, º»°ü2Ãþ)
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TSV ÀÇ °³¿ë
TSV ÀÇ °øÁ¤
TSV ÀÇ ÀÀ¿ë
  • Organizer & Chair: ¼ÕÇöö ±³¼ö(¿¬¼¼´ëÇб³)
  • ¿¬»ç1: ȲÇö»ó ±³¼ö(Æ÷Ç×°ø°ú´ëÇб³)
¹ßÇ¥ ÁÖÁ¦  Cross-point ¸Þ¸ð¸®¿ë ÀúÇ׺¯È­¸Þ¸ð¸® ¹× ¼±ÅüÒÀÚ
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 14:00~16:00
¹ßÇ¥ Àå¼Ò  Room D (½ºÅ¸È¦, º»°ü2Ãþ)
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• Filament type vs. Interface type RRAM
• Variability of switching parameters and Reliability
• Selector devices
• Neuromorphic device
  • ¿¬»ç2: Á¶¸¸È£ ±³¼ö(¿¬¼¼´ëÇб³)
¹ßÇ¥ ÁÖÁ¦  Science and Applications of Phase Change Materials
¹ßÇ¥ ½Ã°£  2013³â 2¿ù 4ÀÏ(¿ù) / 16:00~18:00
¹ßÇ¥ Àå¼Ò  Room D (½ºÅ¸È¦, º»°ü2Ãþ)
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• History of Phase change Memories (PCM)
• Structure of Phase Change Materials
• Density Functional Theory Calculations for Phase Change Materials
• Crystallization Kinetics
• Short and Long-range Order in Phase Change Materials
• Optical and Electrical Properties of Phase Change Materials
• Summary