Á¦24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ

A. Interconnect & Package

ºÐ°úÀ§¿øÀå ÀÌÈÄÁ¤ (¼º±Õ°ü´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ÀÌ¿õ¼± (SKÇÏÀ̴нº)
ºÐ°úÀ§¿ø °û³ëÁ¤ (SKÇÏÀ̴нº), ±è±¸¼º (°­³²´ëÇб³), ±è¼±Á¤ (¿ï»ê´ëÇб³), ±è¼öÇö (¿µ³²´ëÇб³),
±è½Ã¹ü (¸Å±×³ªÄ¨¹ÝµµÃ¼), ±èÀº°æ (¼­¿ï°úÇбâ¼ú´ëÇб³), ±èÇüÁØ (¿¬¼¼´ëÇб³),
¹Ú¿µ¹è (¾Èµ¿´ëÇб³), ¾È»óÈÆ (»ï¼ºÀüÀÚ), ¿©Á¾¼® (¿¬¼¼´ëÇб³), ÀÌ¿øÁØ (¼¼Á¾´ëÇб³),
ÀÌÁ¾¹« (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø), ÀÌÅÂÀ± (¿¬¼¼´ëÇб³), Á¶ÅÂÁ¦ (»ï¼ºÀüÀÚ), ÁÖ¿µÃ¢ (¼­¿ï´ëÇб³),
±Ç¿ÀÁß (ÀÎõ´ëÇб³), ÀÌÇѺ¸¶÷ (ÀÎõ´ëÇб³), ¼ÕÀ±Ãµ (»ï¼ºÀüÀÚ), Á¶Ã¶È£ (SKÇÏÀ̴нº)

B. Patterning

ºÐ°úÀ§¿øÀå À¯¿øÁ¾ (¼º±Õ°ü´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ¾ÈÁøÈ£ (ÇѾç´ëÇб³)
ºÐ°úÀ§¿ø ±èÇö¿ì (ÇѾç´ëÇб³), ½Å°æ¼· (»ï¼ºÀüÀÚ), ¾Èâ³² (ASML), ¿À¿ëÈ£ (¿ø±¤´ëÇб³),
Á¤Áö¿ø (ÀÎÇÏ´ëÇб³), Á¤Áø±â (SKÇÏÀ̴нº), ȲÂù (»ï¼ºÀüÀÚ), Á¤¿¬½Ä (KAIST),
ÁÖÁ¤ÈÆ (±º»ê´ëÇб³), äÈñ¿± (¼º±Õ°ü´ëÇб³), ¾çÇöÁ¶ (SKÇÏÀ̴нº)

C. Material Growth & Characterization

ºÐ°úÀ§¿øÀå ÀÌÀçÁø (¾ÆÁÖ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ¼ÛÁøµ¿ (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø)
ºÐ°úÀ§¿ø ±Ç¼ø¿ë (UNIST), ¹ÚÀÏ±Ô (¿µ³²´ëÇб³), ¼ÛÁ¤ÈÆ (°øÁÖ´ëÇб³), ÀÌ°ø¼ö (»ï¼ºÀüÀÚ),
ÀÌ»óÁØ (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø), ÀÌÁرâ (Àü³²´ëÇб³), ÀÌö·Î (ÀüºÏ´ëÇб³), Á¶¿ëÈÆ (KAIST),
¹ÚÁø¼· (ÇѾç´ëÇб³)

D. Thin Film Process Technology

ºÐ°úÀ§¿øÀå ¹Î¿ä¼Á (°Ç±¹´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå Àü»óÈÆ (°í·Á´ëÇб³)
ºÐ°úÀ§¿ø ±èÇü¼· (¼º±Õ°ü´ëÇб³), ¹ÚÁ¤ÈÆ (SKÇÏÀ̴нº), ¹ÚÅÂÁÖ (ÇѾç´ëÇб³), À±¼º¹Î (°æÈñ´ëÇб³),
ÀÌ»ó¿î (¾ÆÁÖ´ëÇб³), Á¤¼±È£ (Çѱ¹È­Çבּ¸¿ø), Á¶¼º¸ñ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
Á¶¿µÁø (»ï¼ºÁ¾ÇÕ±â¼ú¿ø), ÃÖ¸®³ë (ÀÎÇÏ´ëÇб³), ÃÖâȯ (ÇѾç´ëÇб³)

E. Compound Semiconductors

ºÐ°úÀ§¿øÀå ÀåÅÂÈÆ (ÀüºÏ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ±è±Ô»ó (»óÁö´ëÇб³)
ºÐ°úÀ§¿ø °ûÁؼ· (¼øõ´ëÇб³), ±ÇÇõÀÎ (Áß¾Ó´ëÇб³), ±èÁ¦¿ø (»ï¼ºÀüÀÚ), ¹®Àç°æ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
¹Îº´±Ô (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø), ¼­Àº°æ (ÀüºÏ´ëÇб³), ½É±Ôȯ (ÀüºÏ´ëÇб³),
À±Çü¼· (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø), ÀÌÁ¤Èñ (°æºÏ´ëÇб³), ÀÓÁ¾¿ø (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
Â÷È£¿µ (È«ÀÍ´ëÇб³), ¹Ú¿ëÁ¶ (¼­¿ï´ëÇб³), ¿À½Â±Ô (ÈÞ½ºÅæ´ëÇб³)

F. Silicon and Group-IV Devices and Integration Technology

ºÐ°úÀ§¿øÀå Á¶¼ºÀç (°¡Ãµ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå À̳»ÀÎ (»ï¼ºÀüÀÚ)
ºÐ°úÀ§¿ø ±è°æ·Ï (UNIST), ±è¼Ò¿µ (¼º±Õ°ü´ëÇб³), ±èÃáȯ (SKÇÏÀ̴нº), ±èÅÂÈÆ (»ï¼ºÀüÀÚ),
³²µ¿¿í (ÀÎÇÏ´ëÇб³), ¹èµ¿ÀÏ (»ï¼ºÀüÀÚ), ½Åµ¿¼® (»ï¼ºÀüÀÚ), ½Åâȯ (¼­¿ï½Ã¸³´ëÇб³),
¾Èµ¿È¯ (±¹¹Î´ëÇб³), ¾çÁö¿î (°í·Á´ëÇб³), À̺´ÈÆ (±¤ÁÖ°úÇбâ¼ú¿ø), À̼ºÁÖ (¼º±Õ°ü´ëÇб³),
ÀÌÁ¾È£ (¼­¿ï´ëÇб³), ÀÌÈñ´ö (Ãæ³²´ëÇб³), ÀüÀλó (Çѱ¹Ulvac), Á¤¼º¿õ (SKÇÏÀ̴нº),
Á¶ÀÏȯ (¸íÁö´ëÇб³), Ãֿ쿵 (¼­°­´ëÇб³)

G. Device & Process Modeling, Simulation and Reliability

ºÐ°úÀ§¿øÀå ±è´ëȯ (±¹¹Î´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå Á¶Àοí (SKÇÏÀ̴нº)
ºÐ°úÀ§¿ø ¹Ú¹®¼ö (»ï¼ºµð½ºÇ÷¹ÀÌ), ¹ÚÂùÇü (±¤¿î´ëÇб³), ¹èÁ¾¿í (LGµð½ºÇ÷¹ÀÌ), À¯Çö¿ë (°í·Á´ëÇб³),
ÀÌÀç±Ô (»ï¼ºÀüÀÚ), ÀÌÁ¤¼ö (Æ÷Ç×°ø°ú´ëÇб³), ÃÖ¼ºÁø (±¹¹Î´ëÇб³), ±è¼ºµ¿ (SKÇÏÀ̴нº),
³ªÇöö (µ¿ºÎÇÏÀÌÅØ), È«¼º¹Î (±¤ÁÖ°úÇбâ¼ú¿ø)

H. Display and Imaging Technologies

ºÐ°úÀ§¿øÀå ¹èº´¼º (È£¼­´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ÀÌÈ£³â (¼øõÇâ´ëÇб³)
ºÐ°úÀ§¿ø ±¸º»¿ø (»ï¼ºÁ¾ÇÕ±â¼ú¿ø), ±ÇÀåÇõ (°æÈñ´ëÇб³), ±è¿µ¼® (ÀüÀÚºÎÇ°¿¬±¸¿ø), ±èÀçÈÆ (ÇѾç´ëÇб³),
³ë¿ë¿µ (µ¿±¹´ëÇб³), ¸ð¿¬°ï (»ï¼ºµð½ºÇ÷¹ÀÌ), ¹Ú»óÈñ (KAIST), ¼ÛÁ¤±Ù (µ¿¾Æ´ëÇб³),
À̽¿ì (°æÈñ´ëÇб³), ÀÌ¿ìÀç (ÀÌ¿£¿¡ÇÁÅ×Å©³î·ÎÁö), Á¤Àç°æ (ÇѾç´ëÇб³), Á¤ÇåÁØ (Ŭ·¹¾îÇȼ¿¢ß),
Á¶Á¤´ë (Çѱ¹±â°è¿¬±¸¿ø), Áøº´µÎ (´Ü±¹´ëÇб³), ÃÖº´´ö(ÇѾç´ëÇб³), È«¹®Ç¥ (°í·Á´ëÇб³),
È«¿Ï½Ä (¼­¿ï½Ã¸³´ëÇб³), È«¿ëÅà (¼­¿ï´ëÇб³)

I. MEMS & Sensors Systems

ºÐ°úÀ§¿øÀå ±è»óÀÎ (¾ÆÁÖ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ÇÑ»ó¿í (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø)
ºÐ°úÀ§¿ø °­°üÇü (Æ÷Ç×°ø°ú´ëÇб³), ±Ç¼øÈ« (Áß¾Ó´ëÇб³), ±èµ¿Çö (¿¬¼¼´ëÇб³), ±è¿µ¹Î (È«ÀÍ´ëÇб³),
³²È¿Áø (LGÀüÀÚ), ·ùÇÑ¿­ (ÀÎÇÏ´ëÇб³), ¹®¼º¿í (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø), ½ÅÇüÀç (»ï¼ºÀüÀÚ),
À¯°æ½Ä (KAIST), Àå¿øÀÍ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø), Àüµ¿È¯ (Çѱ¹³ª³ë±â¼ú¿ø), Á¶¼ºº¸ (°¡Ãµ´ëÇб³)

J. Nano-Science & Technology

ºÐ°úÀ§¿øÀå ±è»ó¿í (KAIST)
°øµ¿ºÐ°úÀ§¿øÀå Á¤¼ºÁØ (»ï¼ºÁ¾ÇÕ±â¼ú¿ø)
ºÐ°úÀ§¿ø °­±â¼® (¼­¿ï´ëÇб³), ±è¿õ (°í·Á´ëÇб³), ¹Úº´±¹ (KAIST), ¹Ú¿øÀÏ (ÇѾç´ëÇб³),
¹Úö¹Î (¿¬¼¼´ëÇб³), ÀÌ°ÇÀç (KAIST), À̸íÀç (IBS), ÀÌ¿ì (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø),
ÀÌŹÈñ (¼­¿ï´ëÇб³), ÀÌÅ¿ì (Æ÷Ç×°ø°ú´ëÇб³), Á¤¿¬½Ä (KAIST), Á¶°æ»ó (»ï¼ºÁ¾ÇÕ±â¼ú¿ø),
ÃÖ¼ºÀ² (KAIST)

K. Memory (Design & Process Technology)

ºÐ°úÀ§¿øÀå ¹é½ÂÀç (ÇÑ°æ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ±è¼ö±æ (SKÇÏÀ̴нº)
ºÐ°úÀ§¿ø °­¸í°ï (Çѱ¹±³Åë´ëÇб³), ÀÌÁßÈ£ (¿ëÀδëÇб³), ±è¿µÈñ (â¿ø´ëÇб³), ±è¿ë±â (SKÇÏÀ̴нº),
¹Î°æ½Ä (±¹¹Î´ëÇб³), ÀÌÀ籸 (»ï¼ºÀüÀÚ), Á¶¼ºÀÍ (ÀüºÏ´ëÇб³), Á¶¿ì¿µ (»ï¼ºÀüÀÚ),
ÃÖ¿µµ· (»ï¼ºÀüÀÚ), È«»óÈÆ (°æÈñ´ëÇб³), ±Ç¿ë¿ì (È«ÀÍ´ëÇб³), ¼Õ¿ëÈÆ (»ï¼ºÀüÀÚ),
¹éÀÎ±Ô (»ï¼ºÀüÀÚ), ³ë±¤¸í (SKÇÏÀ̴нº), ±èÀ± (ºÎ»ê´ëÇб³)

L. Analog Design

ºÐ°úÀ§¿øÀå ±èÁ¾¼± (È«ÀÍ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå Çã½ÂÂù(»ï¼ºÀüÀÚ)
ºÐ°úÀ§¿ø ±è¼öȯ (¼­¿ï´ëÇб³), ±è¿ë½Å (°í·Á´ëÇб³), ±èÅ¿í (¿¬¼¼´ëÇб³), ³ëÁ¤Áø (ÇѾç´ëÇб³),
·ù½ÂŹ (KAIST), ¹®¿ë (¼þ½Ç´ëÇб³), ¹é±¤Çö (Áß¾Ó´ëÇб³), ¼Û¹Î±Ô (µ¿±¹´ëÇб³),
½ÉÀçÀ± (Æ÷Ç×°ø°ú´ëÇб³), ¾È±æÃÊ (¼­°­´ëÇб³), À¯Ã¢½Ä (ÇѾç´ëÇб³), À̽ÂÈÆ (¼­°­´ëÇб³),
ÀÌÀ±½Ä (UNIST), ÀÓ½ÅÀÏ (¼­°æ´ëÇб³), Á¶Á¦±¤ (LGÀüÀÚ), ÃÖÀ±°æ (»ï¼ºÀüÀÚ),
ÃÖÁßÈ£ (¼­¿ï½Ã¸³´ëÇб³), È«±¹Å (LGÀüÀÚ), ±èÁøÅ (°Ç±¹´ëÇб³), À念Âù (±Ý¿À°ø´ë)

M. RF and Wireless Design

ºÐ°úÀ§¿øÀå ÀÌÁ¾¿í (°æÈñ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå À̹ÎÀç (±¤ÁÖ°úÇбâ¼ú¿ø)
ºÐ°úÀ§¿ø ±è¿µÁø (Çѱ¹Ç×°ø´ëÇб³), ±èÁøÅ (°Ç±¹´ëÇб³), ±èõ¼ö (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
±èÅ¿í (¿¬¼¼´ëÇб³), ³²Àϱ¸ (ºÎ»ê´ëÇб³), ¹Îº´¿í (¿¬¼¼´ëÇб³), ¹éµ¿Çö (Áß¾Ó´ëÇб³),
½ÅÇöö (±¤¿î´ëÇб³), ¿Õ¼ºÈ£ (RadioPulse Inc.), À±»ó¿õ (°æÈñ´ëÇб³), ÀÌ°­À± (¼º±Õ°ü´ëÇб³),
Á¶¼ºÈ¯ (KAIST)

N. VLSI CAD

ºÐ°úÀ§¿øÀå ÀÌÁ¾Àº (UNIST)
°øµ¿ºÐ°úÀ§¿øÀå Á¤Àç¿ë (ÀÎõ´ëÇб³)
ºÐ°úÀ§¿ø ±è¿µ¹Î (±¤¿î´ëÇб³), ±èÀ±Áø (¼÷¸í¿©ÀÚ´ëÇб³), ¾çÁؼº (¼º±Õ°ü´ëÇб³), À¯½ÂÁÖ (¼­¿ï´ëÇб³),
ÀÌ°­Èñ (University New South Wales (È£ÁÖ)), Á¤ÀÇ¿µ (¿¬¼¼´ëÇб³), Á¶¿µÃ¶ (»ï¼ºÀüÀÚ),
ÃÖÁ¤¿¬ (»ï¼ºÀüÀÚ), °­¼®Çü (UNIST), ½Å¿µ¼ö (KAIST)

O. System LSI Design

ºÐ°úÀ§¿øÀå ¹ÚÁ¾¼± (°í·Á´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ±è°æ±â (´ë±¸´ëÇб³)
ºÐ°úÀ§¿ø °øÁØÁø (»ï¼ºÀüÀÚ), °­¼®Çü (¿ï»ê°úÇбâ¼ú´ëÇб³), ±èÁöÈÆ (¼­¿ï°úÇбâ¼ú´ëÇб³), ±èÁø»ó (°æÈñ´ëÇб³),
±èÅÂȯ (Çѱ¹Ç×°ø´ëÇб³), ³²º´±Ô (Ãæ³²´ëÇб³), À̱¤¿± (¼­°æ´ëÇб³), À̼º¼ö (¼þ½Ç´ëÇб³),
ÀÌ¿µÁÖ (±¤¿î´ëÇб³), ÀÌÀ±¸í (¼º±Õ°ü´ëÇб³), ÀÌÀçÁø (¼­¿ï´ëÇб³), ÀÌÁ¾¿­ (ÀüºÏ´ëÇб³),
ÀÌÁø¾ð (»ï¼ºÀüÀÚ), ÀÌÂùÈ£ (¼þ½Ç´ëÇб³), ÀÌäÀº (ÀÎÇÏ´ëÇб³), ÀÌÇÑÈ£ (ÀÎÇÏ´ëÇб³),
ÀåÀÍÁØ (°æÈñ´ëÇб³), Á¤°Ç¿Á (À¯ÇÑ´ëÇб³), Á¤±â¼® (ÇѾç´ëÇб³), Á¤Áø±Õ (ÀüºÏ´ëÇб³),
Á¶°æ·Ï (ÃæºÏ´ëÇб³), Ãֱ⿵ (¼­¿ï´ëÇб³), ÃÖÁظ² (°æºÏ´ëÇб³), ÇÑÅÂÈñ (¼º±Õ°ü´ëÇб³)

P. Device for Energy (Solar Cell, Power Device, Battery, etc.)

ºÐ°úÀ§¿øÀå ÇÔ¹®È£ (±¤ÁÖ°úÇбâ¼ú¿ø)
°øµ¿ºÐ°úÀ§¿øÀå ÀåÈ£¿ø (¼­¿ï´ëÇб³)
ºÐ°úÀ§¿ø ¸íÀç¹Î (¿¬¼¼´ëÇб³), ±èÀ±±â (»ï¼ºSDI), ±è¿µÈ¯ (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø), ±èÇüŹ (È«ÀÍ´ëÇб³),
¹Ú¼º±â ((ÁÖ)¿¡½º¿£ÅØ), ¼ÛÈñÀº (Çѱ¹¿¡³ÊÁö±â¼ú¿¬±¸¿ø), Á¤ÁØÈ£ (Çѱ¹±â°è¿¬±¸¿ø),
Á¤Çö¼® (¼º±Õ°ü´ëÇб³), Á¼ºÈÆ (¼­¿ï»ê¾÷´ëÇб³), ¼ÕÁ¤°ï (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø), º¯Çý·É (KAIST),
À¯Çбâ (¾ÆÁÖ´ëÇб³), ±è¼ö¿µ (Áß¾Ó´ëÇб³), À̹ÌÁ¤ (±¹¹Î´ëÇб³), ±è¹Ì¼Ò (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø)

Q. Metrology, Inspection, and Yield Enhancement

ºÐ°úÀ§¿øÀå ¹Úº´Ãµ (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø)
°øµ¿ºÐ°úÀ§¿øÀå À¯Çü¿ø (È÷ŸġÇÏÀÌÅ×Å©)
ºÐ°úÀ§¿ø ±èÁßÁ¤ (»ï¼ºÀüÀÚ), ±èÀç»ï(), ±èÁø½Â (ÀüºÏ´ëÇб³), ¹è¿¬È£ (KLA-Tencor),
¾çÁظð (³ª³ëÁ¾ÇÕ±â¼ú¿ø), ¿ìºÀÁÖ (¢ß½ê¹Ì½Ã½ºÄÚ), À̺´È£ (SKÇÏÀ̴нº), ÀÌ»ó±æ (°í·Á´ëÇб³),
ÀÓ¼±Á¾ (Çѱ¹±â°è¿¬±¸¿ø), Á¶¿ëÀç (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø), ÇÑÀç¿ø (¿¬¼¼´ëÇб³)

R. Semiconductor Software

ºÐ°úÀ§¿øÀå ¹ÝÈ¿°æ (ÀÌÈ­¿©ÀÚ´ëÇб³)
°øµ¿ºÐ°úÀ§¿øÀå ±èż® (±¤¿î´ëÇб³)
ºÐ°úÀ§¿ø °­¼ö¿ë (ÇѾç´ëÇб³), ±èÁ¾¹Î (Samsung Inc), ¹é½ÂÀç (´Ü±¹´ëÇб³), ³ë»ïÇõ (È«ÀÍ´ëÇб³),
¹ÎÈ« (È£¼­´ëÇб³), ½Åµ¿±º (¼º±Õ°ü´ëÇб³), ¿øÀ¯Áý (ÇѾç´ëÇб³), À̵¿Èñ (¼­¿ï½Ã¸³´ëÇб³),
ÀÌÀºÁö (ÃæºÏ´ëÇб³), ÀÌâ°Ç (¼­¿ï´ëÇб³), ÀÓÈ¿ÁØ (LGÀüÀÚ), Á¶»ó¿¬ (»ï¼ºÀüÀÚ),
ÁÖ¿ë¼ö (±¹¹Î´ëÇб³), ÃÖÁ¾¹« (´Ü±¹´ëÇб³), ÇãÁØ¿µ (ÇѼº´ëÇб³), µµÀÎȯ (»ï¼ºÀüÀÚ),
ÀÌ°ÇÈ£ (LGÀüÀÚ), À±´ë¼® (À©µå¸®¹öÄÚ¸®¾Æ)

S. Chip Design Contest

ºÐ°úÀ§¿øÀå Á¶°æ·Ï (ÃæºÏ´ëÇб³)
ºÐ°úºÎÀ§¿øÀå ±èÅ¿í (¿¬¼¼´ëÇб³)
ºÐ°úÀ§¿ø ÃÖÁظ² (°æºÏ´ëÇб³), ¹éµ¿Çö (Áß¾Ó´ëÇб³), ÀÌ¿µÁÖ (±¤¿î´ëÇб³), ½ÉÀçÀ± (POSTECH),
°íÇüÈ£ (Ãæ³²´ëÇб³), ¾çº´µµ (ÃæºÏ´ëÇб³), Â÷Çõ±Ô (¼­¿ï°úÇбâ¼ú´ëÇб³), Áöµ¿¿ì (¾ÆÁÖ´ëÇб³),
äÇüÀÏ (±¹¹Î´ëÇб³), À̽ÂÀº (¼­¿ï°úÇбâ¼ú´ëÇб³), ¹Úâ±Ù (¼þ½Ç´ëÇб³), À念Âù (±Ý¿À°ø°ú´ëÇб³),
ÀÌÁ¾¿­ (ÀüºÏ´ëÇб³)