2¿ù 13ÀÏ(¿ù) | Room A | Room B | Room C |
¿¡¸Þ¶öµå (2Ãþ) | ÅäÆÄÁî (2Ãþ) | »çÆÄÀ̾î (2Ãþ) | |
14:00-18:00 | [Short Course 1] Optical Technologies for Metrology and Inspection |
[Short Course 2] 2D ¹ÝµµÃ¼¼ÒÀçÀÇ Æ¯¼º ¹× ÀÀ¿ë |
[Short Course 3] Neuromorphic ¼ÒÀÚ ¹× È°¿ë |
2¿ù 14ÀÏ(È) | Room A | Room B | Room C | Room D | Room E | Room F | Room G | Room H | Room I | ||
2Ãþ | 3Ãþ | ||||||||||
¿¡¸Þ¶öµå | ÅäÆÄÁî | »çÆÄÀ̾î | Å©¸®½ºÅ» | ·çºñ | Á¦À̵å | ÄÚ·² | ´ÙÀ̾Ƹóµå1 | ´ÙÀ̾Ƹóµå2 | ·Îºñ | ||
08:30-10:00 | [TA1-D] | [TB1-K] | [TC1-G] | [TD1-S] | [TE1-F] | [TG1-J] | Àü½Ã | Chip Design Contest | |||
Hybrid Oxide Thin Films | Unconventional Approaches in Resistance Switching Memories | Device Physics and Character -ization 1 |
Chip Design Contest | Advanced CMOS Devices I | Graphene base Nanofabrications (08:30-10:30) |
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10:00-10:10 | ÈÞ½Ä(&Ä¿ÇÇ, ´Ù°ú) | ||||||||||
10:10-11:40 | [TA2-D] | [TB2-K] | [TC2-G] | [TD2-E] | [TE2-F] | [TG2-J] | |||||
Emerging Thin Film Technology | Dielectric, Ferromagnetic, and Phase Change Materials for Memory Application | Reliability Analysis | WBG High Frequency Device | Advanced CMOS Devices II | Two-Dimensional Materials beyond Graphene (10:40-11:40) |
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11:40-13:00 | Á¡½É [Æ÷½ÃÁð / ÁöÇÏ1Ãþ] | ||||||||||
13:00-14:00 | Plenary Session1 [´ÙÀ̾Ƹóµå1 / 3Ãþ]: Á¤Àº½Â ºÎ»çÀå (»ï¼º¹ÝµµÃ¼¿¬±¸¼Ò) "The Present and Future of Semiconductor Technology" |
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14:00-15:00 | Plenary Session2 [´ÙÀ̾Ƹóµå1 / 3Ãþ]: Dr. Geoffrey W. Burr (IBM Almaden Research Center, USA) "Neuromorphic Technologies for Next-Generation Cognitive Computing" |
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15:00-16:00 | [TP1] Æ÷½ºÅͼ¼¼Ç1 |
CDC °ü¶÷½Ã°£ (Core Session) |
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16:00-17:30 | [TA3-D] | [TB3-H] | [TC3-G] | [TD3-E] | [TE3-F] | [TF3-R] | [TG3-J] | ||||
Oxide Thin Film Transistors | Display and Imaging Technologies | Device Modeling and Simulation 1 | WBG Power Device | Flash and Si Memory Technologies | Semiconductor Software 1 | Two-Dimensional Materials beyond Graphene | |||||
18:00-20:00 | ¸¸Âù [´ÙÀ̾Ƹóµå1 / 3Ãþ] | ||||||||||
20:00-22:00 | Rump Session 1 [¿¡¸Þ¶öµå / 2Ãþ] ÀúÀü·Â ÀΰøÁö´ÉÀ» À§ÇÑ ´º·Î¸ðÇÈ ±â¼úÀÇ Àü¸Á Rump Session 2 [ÅäÆÄÁî / 2Ãþ] Smart Cars: The Next Growth Engine for the Semiconductor Industry Rump Session 3 [»çÆÄÀ̾î / 2Ãþ] ¹ÝµµÃ¼ ½ºÄÉÀϸµÀÇ ÇâÈÄ Àü¸Á°ú ±â¼ú °úÁ¦ |
2¿ù 15ÀÏ(¼ö) | Room A | Room B | Room C | Room D | Room E | Room F | Room G | Room H | Room I | |
2Ãþ | 3Ãþ | |||||||||
¿¡¸Þ¶öµå | ÅäÆÄÁî | »çÆÄÀ̾î | Å©¸®½ºÅ» | ·çºñ | Á¦À̵å | ÄÚ·² | ´ÙÀ̾Ƹóµå1 | ´ÙÀ̾Ƹóµå2 | ·Îºñ | |
08:30-10:00 | [WA1-D] | [WB1-A] | [WC1-G] | [WD1-I] | [WE1-F] | [WF1-B] | [WG1-C] | [WH1-O] | Àü½Ã | |
Thin Films for Memories and Transistors | Packaging and Design | Device Physics and Character -ization 2 |
Flexible Sensors | Advanced CMOS Processing and Reliability | Plasma and Patterning Processes | Materials Growth & Character -ization I |
VLSI System Design and Applications 1 | |||
10:00-10:10 | ÈÞ½Ä (& Ä¿ÇÇ, ´Ù°ú) | |||||||||
10:10-11:40 | [WA2-D] | [WB2-A] | [WC2-G] | [WD2-I] | [WE2-F] | [WF2-B] | [WG2-C] | [WH2-O] | ||
2D Materials and Devices | Process issues of Interconnect | Device Modeling and Simulation 2 | Bio/Gas/Pressure Sensors | Flash and Si Memory Technologies | Patterning and Lithography | Materials Growth & Character -ization II |
VLSI System Design and Applications 2 | |||
11:40-12:40 | Á¡½É [Æ÷½ÃÁð / ÁöÇÏ1Ãþ] | |||||||||
12:40-14:25 | [WA3-D] | [WB3-K] | [WC3-Q] | [WD3-I] | [WE3-F] | [WF3-R] | [WG3-J] | [WH3-M] | ||
ALD/CVD Thin Films | Resistance Switching Memories | Metrology and Inspection (I) | FET-based sensors | Advanced CMOS Integrated Circuits | Semiconductor Software 2 | Nanofabrication for Next Generation Device Applications | RF and Wireless System and Components | |||
14:25-15:25 | [WP1] Æ÷½ºÅͼ¼¼Ç2 |
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15:25-17:10 | [WA4-P] | [WB4-K] | [WC4-Q] | [WD4-E] | [WE4-L] | [WF4-R] | [WG4-J] | [WH4-N] | ||
Materials and Devices for Energy | Understanding Resistance Switching Phenomena | Metrology and Inspection(II) | WBG Chharacterization Technology | Analog Circuit Design | Semiconductor Software 3 | Nanofabrication for Next Generation Device Applications | Advances in Design Automation and Test |
Æ÷½ºÅͼ¼¼Ç1 | D,F,G,H,K,S | |
Æ÷½ºÅͼ¼¼Ç2 | A,B,C,E,I,J,L,M,N,O,P,Q,R |
¿äÀÏ | ¼¼¼Ç·ë | ¼¼¼Ç¼ø¼ | ºÐ°ú | |||||
T | È¿äÀÏ | A | Room A | 1 | ù¹ø° ¼¼¼Ç | A | I | Q |
W | ¼ö¿äÀÏ | B | Room B | 2 | µÎ¹ø° ¼¼¼Ç | B | J | R |
C | Room C | 3 | ¼¼º¯Â° ¼¼¼Ç | C | K | S | ||
D | Room D | 4 | ³×¹ø° ¼¼¼Ç | D | L | |||
E | Room E | E | M | |||||
F | Room F | F | N | |||||
G | Room G | G | O | |||||
H | Room H | H | P |
¡Ø TA1-D: È¿äÀÏ Room A¿¡¼ ù¹ø°·Î ÁøÇàµÇ´Â DºÐ°ú ¼¼¼Ç
¡Ø TA1-D-1: È¿äÀÏ Room A¿¡¼ ù¹ø°·Î ÁøÇàµÇ´Â DºÐ°ú ¼¼¼ÇÀÇ Ã¹¹ø° ¹ßÇ¥
ºÐ°ú¸í | |
A | Interconnect & Package |
B | Patterning |
C | Materials Growth & Characterization |
D | Thin Film Process Technology |
E | Compound Semiconductors |
F | Silicon and Group-IV Devices and Integration Technology |
G | Device & Process Modeling, Simulation and Reliability |
H | Display and Imaging Technologies |
I | MEMS & Sensor Systems |
J | Nano-Science & Technology |
K | Memory (Design & Process Technology) |
L | Analog Design |
M | RF and Wireless Design |
N | VLSI CAD |
O | System LSI Design |
P | Device for Energy (Solar Cell, Power Device, Battery, etc.) |
Q | Metrology, Inspection, and Yield Enhancement |
R | Semiconductor Software |
S | Chip Design Contest |