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Home > ´ëȸ°³¿ä > Á¶Á÷±â±¸ > ºÐ°úÀ§¿øȸ |
A. Interconnect & Package
ºÐ°úÀ§¿øÀå |
ÀÌ¿øÁØ(¼¼Á¾´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
ÀÌ¿õ¼±(SKÇÏÀ̴нº) |
ºÐ°úÀ§¿ø |
°û³ëÁ¤ (SKÇÏÀ̴нº),
±è±¸¼º (°³²´ëÇб³),
±è¼öÇö (¿µ³²´ëÇб³),
±è½Ã¹ü (¸Å±×³ªÄ¨¹ÝµµÃ¼),
±èÇüÁØ (¿¬¼¼´ëÇб³),
¹Ú¿µ¹è (¾Èµ¿´ëÇб³),
ÀÌÅÂÀ± (¿¬¼¼´ëÇб³),
ÀÌÇÑÃá (µ¿ºÎÇÏÀÌÅØ),
ÀÌÈÄÁ¤ (¼º±Õ°ü´ëÇб³),
ÁÖ¿µÃ¢ (¼¿ï´ëÇб³),
±èÀº°æ (¼¿ï°úÇбâ¼ú´ëÇб³),
±è¼±Á¤ (¿ï»ê´ëÇб³),
¿©Á¾¼® (¿¬¼¼´ëÇб³),
ÀÌÁ¾¹« (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
Á¶ÅÂÁ¦ (»ï¼ºÀüÀÚ),
¾È»óÈÆ (»ï¼ºÀüÀÚ) |
B. Patterning
ºÐ°úÀ§¿øÀå |
¾çÇöÁ¶(SKÇÏÀ̴нº) |
°øµ¿ºÐ°úÀ§¿øÀå |
À¯¿øÁ¾(¼º±Õ°ü´ëÇб³) |
ºÐ°úÀ§¿ø |
½Å°æ¼· (»ï¼ºÀüÀÚ),
±èÇö¿ì (ÇѾç´ëÇб³),
¾Èâ³² (ASML),
¿À¿ëÈ£ (¿ø±¤´ëÇб³),
Á¤Áö¿ø (ÀÎÇÏ´ëÇб³),
¾ÈÁøÈ£ (ÇѾç´ëÇб³),
Á¤Áø±â (SKÇÏÀ̴нº),
ȲÂù (»ï¼ºÀüÀÚ) |
C. Material Growth & Characterization
ºÐ°úÀ§¿øÀå |
¹ÚÁø¼·(ÇѾç´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
¼ÛÁøµ¿(Çѱ¹°úÇбâ¼ú¿¬±¸¿ø) |
ºÐ°úÀ§¿ø |
±Ç¼ø¿ë (¿ï»ê°úÇбâ¼ú´ëÇб³),
¹ÚÀÏ±Ô (¿µ³²´ëÇб³),
¼ÛÁ¤ÈÆ (°øÁÖ´ëÇб³),
ÀÌ°ø¼ö (»ï¼ºÀüÀÚ),
ÀÌ»óÁØ (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø),
ÀÌÁرâ (Àü³²´ëÇб³),
ÀÌö·Î (ÀüºÏ´ëÇб³),
Á¶¿ëÈÆ (KAIST)
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D. Thin Film Process Technology
ºÐ°úÀ§¿øÀå |
Ȳ±âÇö(»ï¼ºÀüÀÚ) |
°øµ¿ºÐ°úÀ§¿øÀå |
À±¼º¹Î(°æÈñ´ëÇб³) |
ºÐ°úÀ§¿ø |
±èÇü¼· (¼º±Õ°ü´ëÇб³),
¹Î¿ä¼Á (°Ç±¹´ëÇб³),
¹ÚÁ¤ÈÆ (SKÇÏÀ̴нº),
¹ÚÅÂÁÖ (ÇѾç´ëÇб³),
Àü»óÈÆ (°í·Á´ëÇб³),
Á¤¼±È£ (Çѱ¹ÈÇבּ¸¿ø),
Á¶¼º¸ñ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
Á¶¿µÁø (»ï¼ºÁ¾ÇÕ±â¼ú¿ø),
ÃÖ¸®³ë (ÀÎÇÏ´ëÇб³),
ÃÖâȯ (ÇѾç´ëÇб³)
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E. Compound Semiconductors
ºÐ°úÀ§¿øÀå |
¹Îº´±Ô(Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø) |
°øµ¿ºÐ°úÀ§¿øÀå |
ÀåÅÂÈÆ(Çѱ¹»ê¾÷±â¼ú´ëÇб³) |
ºÐ°úÀ§¿ø |
°ûÁؼ· (¼øõ´ëÇб³),
±èÁ¦¿ø (»ï¼ºÀüÀÚ),
¹®Àç°æ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
½É±Ôȯ (ÀüºÏ´ëÇб³),
À±Çü¼· (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
ÀÌÁ¤Èñ (°æºÏ´ëÇб³),
ÀÓÁ¾¿ø (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
Â÷È£¿µ (È«ÀÍ´ëÇб³),
¼Àº°æ (ÀüºÏ´ëÇб³),
À¯Àç¼ö (°æÈñ´ëÇб³) |
F. Silicon Device & Integration Technology
ºÐ°úÀ§¿øÀå |
Ãֿ쿵(¼°´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
À̳»ÀÎ(»ï¼ºÀüÀÚ) |
ºÐ°úÀ§¿ø |
À̺´ÈÆ (±¤ÁÖ°úÇбâ¼ú¿ø),
½Åµ¿¼® (»ï¼ºÀüÀÚ),
¾çÁö¿î (°í·Á´ëÇб³),
ÀÌÁ¾È£ (¼¿ï´ëÇб³),
ÀÌÃæÈ£ (»ï¼ºÀüÀÚ),
ÀÌÈñ´ö (Ãæ³²´ëÇб³),
Á¤¼º¿õ (SKÇÏÀ̴нº),
Á¶¼ºÀç (°¡Ãµ´ëÇб³),
±è¼Ò¿µ (¼º±Õ°ü´ëÇб³),
½Åâȯ (¼¿ï½Ã¸³´ëÇб³),
À̼ºÁÖ (¼º±Õ°ü´ëÇб³) |
G. Device & Process Modeling, Simulation and Reliability
ºÐ°úÀ§¿øÀå |
ÀÌÀç±Ô(»ï¼ºÀüÀÚ) |
°øµ¿ºÐ°úÀ§¿øÀå |
½Å¹Îö(KAIST) |
ºÐ°úÀ§¿ø |
±è´ëȯ (±¹¹Î´ëÇб³),
¹ÚÂùÇü (±¤¿î´ëÇб³),
ÀÌÁ¤¼ö (Æ÷Ç×°ø°ú´ëÇб³),
Á¶Àοí (SKÇÏÀ̴нº),
ÃÖÀçÈÆ (SKÇÏÀ̴нº),
À̼ºÇö (Çѱ¹¿Ü±¹¾î´ëÇб³),
ÀÌ»ó±â (µ¿ºÎÇÏÀÌÅØ),
¹Ú¹®¼ö (»ï¼ºµð½ºÇ÷¹ÀÌ),
¹èÁ¾¿í (LGµð½ºÇ÷¹ÀÌ) |
H. Display and Imaging Technologies
ºÐ°úÀ§¿øÀå |
¹èº´¼º(È£¼´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
ÃÖº´´ö(ÇѾç´ëÇб³) |
ºÐ°úÀ§¿ø |
±¸º»¿ø (»ï¼ºÁ¾ÇÕ±â¼ú¿ø),
±ÇÀåÇõ (°æÈñ´ëÇб³),
±è¿µ¼® (ÀüÀÚºÎÇ°¿¬±¸¿ø),
±èÀçÈÆ (ÇѾç´ëÇб³),
³ë¿ë¿µ (µ¿±¹´ëÇб³),
¸ð¿¬°ï (»ï¼ºµð½ºÇ÷¹ÀÌ),
¹®Ã¶Èñ (È£¼´ëÇб³),
¹Ú»óÈñ (KAIST),
¼ÛÁ¤±Ù (µ¿¾Æ´ëÇб³),
À̽¿ì (»ï¼ºÀüÀÚ),
ÀÌ¿ìÀç (ÀÌ¿£¿¡ÇÁÅ×Å©³î·ÎÁö),
Á¤Àç°æ (ÀÎÇÏ´ëÇб³),
Á¤ÇåÁØ (Ŭ·¹¾îÇȼ¿¢ß),
Á¶Á¤´ë (Çѱ¹±â°è¿¬±¸¿ø),
Áøº´µÎ (´Ü±¹´ëÇб³),
È«¹®Ç¥ (°í·Á´ëÇб³),
È«¿Ï½Ä (¼¿ï½Ã¸³´ëÇб³),
È«¿ëÅà (¼¿ï´ëÇб³) |
I. MEMS & Sensor Systems
ºÐ°úÀ§¿øÀå |
¹®¼º¿í(Çѱ¹°úÇбâ¼ú¿¬±¸¿ø) |
°øµ¿ºÐ°úÀ§¿øÀå |
±è»óÀÎ(¾ÆÁÖ´ëÇб³) |
ºÐ°úÀ§¿ø |
°°üÇü (Æ÷Ç×°ø°ú´ëÇб³),
±Ç¼øÈ« (Áß¾Ó´ëÇб³),
±èµ¿Çö (¿¬¼¼´ëÇб³),
±è¿µ¹Î (È«ÀÍ´ëÇб³),
³²È¿Áø (LGÀüÀÚ),
·ùÇÑ¿ (ÀÎÇÏ´ëÇб³),
½ÅÇüÀç (»ï¼ºÀüÀÚ),
À¯°æ½Ä (KAIST),
Àå¿øÀÍ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
Á¶¼ºº¸ (°¡Ãµ´ëÇб³),
ÇÑ»ó¿í (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø),
Àüµ¿È¯ (Çѱ¹³ª³ë±â¼ú¿ø) |
J. Nano-Science & Technology
ºÐ°úÀ§¿øÀå |
ÀÌŹÈñ(¼¿ï´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
Á¶°æ»ó(»ï¼ºÁ¾ÇÕ±â¼ú¿ø) |
ºÐ°úÀ§¿ø |
°±â¼® (¼¿ï´ëÇб³),
±è¿õ (°í·Á´ëÇб³),
±è»ó¿í (KAIST),
¹Ú¿øÀÏ (ÇѾç´ëÇб³),
¹Úö¹Î (¿¬¼¼´ëÇб³),
¾ÈÁ¾Çö (¿¬¼¼´ëÇб³),
ÀÌ¿ì (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø),
ÀÌ°ÇÀç (KAIST),
ÀÌÅ¿ì (Æ÷Ç×°ø°ú´ëÇб³),
ÀÌÇö¿ì (Æ÷Ç×°ø°ú´ëÇб³),
Á¶¹®È£ (¿¬¼¼´ëÇб³),
À̸íÀç (IBS) |
K. Memory (Design & Process Technology)
ºÐ°úÀ§¿øÀå |
¹Î°æ½Ä(±¹¹Î´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
Á¶¿ì¿µ(»ï¼ºÀüÀÚ) |
ºÐ°úÀ§¿ø |
°¸í°ï (»ï¼ºÀüÀÚ),
°ø¹è¼± (¼º±Õ°ü´ëÇб³),
±è¼ö±æ (SKÇÏÀ̴нº),
±è¿µÈñ (â¿ø´ëÇб³),
±è¿ë±â (SKÇÏÀ̴нº),
±èÅý (SKÇÏÀ̴нº),
¹é½ÂÀç (ÇÑ°æ´ëÇб³),
ÀÌÀ籸 (»ï¼ºÀüÀÚ),
Á¶¼ºÀÍ (ÀüºÏ´ëÇб³),
ÃÖ¿µµ· (»ï¼ºÀüÀÚ),
È«»óÈÆ (°æÈñ´ëÇб³) |
L. Analog Design
ºÐ°úÀ§¿øÀå |
¹é±¤Çö(Áß¾Ó´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
¹ÚÀçÁø(»ï¼ºÀüÀÚ) |
ºÐ°úÀ§¿ø |
À¯Ã¢½Ä (ÇѾç´ëÇб³),
±è¼öȯ (¼¿ï´ëÇб³),
ÃÖÀ±°æ (»ï¼ºÀüÀÚ),
±è½ÃÈ£ (¿¬¼¼´ëÇб³),
³ëÁ¤Áø (ÇѾç´ëÇб³),
·ù½ÂŹ (KAIST),
¹®¿ë (¼þ½Ç´ëÇб³),
¼Û¹Î±Ô (µ¿±¹´ëÇб³),
½ÉÀçÀ± (Æ÷Ç×°ø°ú´ëÇб³),
¾È±æÃÊ (¼°´ëÇб³),
Á¶Á¦±¤ (LGÀüÀÚ),
À̽ÂÈÆ (¼°´ëÇб³),
ÀÌÀ±½Ä (ÀüÀÚºÎÇ°¿¬±¸¿ø),
ÀÓ½ÅÀÏ (¼°æ´ëÇб³),
ÃÖÁßÈ£ (¼¿ï½Ã¸³´ëÇб³),
±è¿ë½Å (°í·Á´ëÇб³),
±èÅ¿í (¿¬¼¼´ëÇб³),
È«±¹Å (LGÀüÀÚ) |
M. RF Design
ºÐ°úÀ§¿øÀå |
ÀÌ°À±(¼º±Õ°ü´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
¹ÚÁعè(¢ß¾Æ³ªÆнº) |
ºÐ°úÀ§¿ø |
±è¿µÁø (Çѱ¹Ç×°ø´ëÇб³),
±èÁøÅ (°Ç±¹´ëÇб³),
±èõ¼ö (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø),
±èÅ¿í (¿¬¼¼´ëÇб³),
³²Àϱ¸ (ºÎ»ê´ëÇб³),
¹Îº´¿í (¿¬¼¼´ëÇб³),
¹éµ¿Çö (Áß¾Ó´ëÇб³),
½ÅÇöö (±¤¿î´ëÇб³),
¿Õ¼ºÈ£ (RadioPulseInc.),
À̹ÎÀç (±¤ÁÖ°úÇбâ¼ú¿ø),
ÀÌÁ¾¿í (°æÈñ´ëÇб³),
Á¶¼ºÈ¯ (KAIST) |
N. VLSI CAD
ºÐ°úÀ§¿øÀå |
ÀÌÁ¾Àº(UNIST) |
°øµ¿ºÐ°úÀ§¿øÀå |
±èÀ±Áø(¼÷¸í¿©ÀÚ´ëÇб³) |
ºÐ°úÀ§¿ø |
±èÅÂȯ (¼¿ï´ëÇб³),
À±¼º·Î (¼¿ï´ëÇб³),
À¯½ÂÁÖ (Æ÷Ç×°ø°ú´ëÇб³),
Á¶¿µÃ¶ (»ï¼ºÀüÀÚ),
ÀÌ°Èñ (»ï¼ºÀüÀÚ),
±è¿µ¹Î (¿ï»ê°úÇбâ¼ú´ëÇб³),
Á¤Àç¿ë (ÀÎõ´ëÇб³),
¹Ý¿ëÂù (LGÀüÀÚ),
°¿ë¼® (LGÀüÀÚ),
Á¤ÀÇ¿µ (¿¬¼¼´ëÇб³),
±èÈ«½Ä (SKÇÏÀ̴нº),
ÃÖÁ¤¿¬ (»ï¼ºÀüÀÚ) |
O. System LSI Design
ºÐ°úÀ§¿øÀå |
ÀÌÇÑÈ£(ÀÎÇÏ´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
¹ÚÁ¾¼±(°í·Á´ëÇб³) |
ºÐ°úÀ§¿ø |
°øÁØÁø (»ï¼ºÀüÀÚ),
±è¼±±â (»ï¼ºÀüÀÚ),
±èÁöÈÆ (Ãæ³²´ëÇб³),
±èÁø»ó (°æÈñ´ëÇб³),
³²º´±Ô (Ãæ³²´ëÇб³),
À̱¤¿± (¼°æ´ëÇб³),
ÀÌÀçÁø (¼¿ï´ëÇб³),
ÀÌÁ¾¿ (ÀüºÏ´ëÇб³),
ÀÌÂùÈ£ (¼þ½Ç´ëÇб³),
ÀåÀÍÁØ (°æÈñ´ëÇб³),
Á¤±â¼® (ÇѾç´ëÇб³),
Á¤Áø±Õ (ÀüºÏ´ëÇб³),
Á¶°æ·Ï (ÃæºÏ´ëÇб³),
Ãֱ⿵ (¼¿ï´ëÇб³),
ÃÖÁظ² (°æºÏ´ëÇб³),
ÇÑÅÂÈñ (¼º±Õ°ü´ëÇб³),
Ȳ¸íÀº (»ï¼ºÀüÀÚ),
¹éÀ±Èï (¼¿ï´ëÇб³),
±èÅÂȯ (Çѱ¹Ç×°ø´ëÇб³) |
P. Device for Energy (Solar Cell, Power Device, etc.)
ºÐ°úÀ§¿øÀå |
¸íÀç¹Î(¿¬¼¼´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
±èÀ±±â(»ï¼ºSDI) |
ºÐ°úÀ§¿ø |
±è¿µÈ¯ (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø),
¹Ú¼º±â (LGµð½ºÇ÷¹ÀÌ),
Á¤ÁØÈ£ (Çѱ¹±â°è¿¬±¸¿ø),
Á¼ºÈÆ (¼¿ï»ê¾÷´ëÇб³),
ÇÔ¹®È£ (±¤ÁÖ°úÇбâ¼ú¿ø),
±èÇüŹ (È«ÀÍ´ëÇб³),
Á¤Çö¼® (¼º±Õ°ü´ëÇб³),
¼ÛÈñÀº (Çѱ¹¿¡³ÊÁö±â¼ú¿¬±¸¿ø), ±è¿ëÅ (Çѱ¹°úÇбâ¼ú¿¬±¸¿ø) |
Q. Metrology, Inspection, and Yield Enhancement
ºÐ°úÀ§¿øÀå |
±èÈ£¼·(¼±¹®´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
À¯Çü¿ø(SKÇÏÀ̴нº) |
ºÐ°úÀ§¿ø |
±èÀç»ï (³ª³ë¸ÞÆ®¸¯½ºÄÚ¸®¾Æ¢ß),
±èÁø½Â (ÀüºÏ´ëÇб³),
¹Úº´Ãµ (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø),
¹è¿¬È£ (KLA-Tencor),
¾çÁظð (³ª³ëÁ¾ÇÕ±â¼ú¿ø),
¿ìºÀÁÖ (¢ß½ê¹Ì½Ã½ºÄÚ),
À̺´È£ (Ultratech),
ÀÓ¼±Á¾ (Çѱ¹±â°è¿¬±¸¿ø),
Á¶¿ëÀç (Çѱ¹Ç¥ÁØ°úÇבּ¸¿ø),
ÇÑÀç¿ø (¿¬¼¼´ëÇб³),
±èÁßÁ¤ (»ï¼ºÀüÀÚ),
ÀÌ»ó±æ (»ï¼ºÀüÀÚ) |
R. Semiconductor Software
ºÐ°úÀ§¿øÀå |
¹ÝÈ¿°æ (ÀÌÈ¿©ÀÚ´ëÇб³) |
°øµ¿ºÐ°úÀ§¿øÀå |
¹é½ÂÀç(´Ü±¹´ëÇб³) |
ºÐ°úÀ§¿ø |
¿øÀ¯Áý (ÇѾç´ëÇб³), ÃÖÁ¾¹« (´Ü±¹´ëÇб³), ³ë»ïÇõ (È«ÀÍ´ëÇб³), ±èÁø¼ö (¼º±Õ°ü´ëÇб³),
½Åµ¿±º (¼º±Õ°ü´ëÇб³), °¼ö¿ë (ÇѾç´ëÇб³), ±èÁ¾¹Î (Texas A&M University),
±è¿µ±Õ (Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø), À̵¿Èñ (¼¿ï½Ã¸³´ëÇб³), ³²ÀÌÇö (SKÅÚ·¹ÄÞ), ÀÌâ°Ç (¼¿ï´ëÇб³),
Á¶»ó¿¬ (»ï¼ºÀüÀÚ), ÀÓÈ¿ÁØ (LGÀüÀÚ), ÇãÁØ¿µ (ÇѼº´ëÇб³), ¹ÎÈ« (È£¼´ëÇб³), ±èż® (±¤¿î´ëÇб³),
ÁÖ¿ë¼ö (ÀÌÈ¿©ÀÚ´ëÇб³), ÀÌÀºÁö (ÃæºÏ´ëÇб³)
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