A. Interconnect & Package ºÐ°ú |
WP1-2 |
³í¹®Á¦¸ñ: Liquid Cooling System with TSV for High Power 3D Packages |
ÀúÀÚ: Manseok Park1, Soojung Baek1, Sungdong Kim2, and Sarah Eunkyung Kim1 |
¼Ò¼Ó: 1Graduate School of NID Fusion Technology, Seoul Technology, 2Department of Mechanical System Design Engineering, Seoul Technology |
TP1-3 |
³í¹®Á¦¸ñ: Atomic Layer Deposition of Mo2N Thin Film as a Diffusion Barrier against Cu |
ÀúÀÚ: Yujin Jang1, Sun Ju Lee2, Teak-Mo Chung2, Chang Gyoun Kim2, Tae Eun Hong3, and Soo-Hyun Kim1 |
¼Ò¼Ó: 1School of Materials Science and Engineering, Yeungnam University, 2Thin Film Materials Group, Korea Research Institute of Chemical Technology, 3Busan Center, Korea Basic Science Institute |
TP1-5 |
³í¹®Á¦¸ñ: Ultralow Interlayer Dielectrics for the Next Generation System LSI |
ÀúÀÚ: Sung-Min Cho and Hee-Woo Rhee |
¼Ò¼Ó: Department of Chemical and Biomolecular Engineering, Sogang University |
B. Patterning ºÐ°ú |
WP1-10 |
³í¹®Á¦¸ñ: Wet Etching Process¸¦ ÅëÇÑ Free-Standing EUV Pellicle Membrane Á¦ÀÛ |
ÀúÀÚ: ±èÁ¤È¯1, ÀÌÀç¿í1, È«¼ºÃ¶1, À̽¹Î1, ±èÁ¤½Ä2, ¼ÛÇö¹Î2, ¾ÈÁøÈ£1,2 |
¼Ò¼Ó: 1ÇѾç´ëÇб³ ½Å¼ÒÀç°øÇаú, 2ÇѾç´ëÇб³ ³ª³ë¹ÝµµÃ¼°øÇаú |
WP1-13 |
³í¹®Á¦¸ñ: Plasma Etching to forming One-Dimensional Electrical Contact to Molybdenum Disulfide |
ÀúÀÚ: Zheng Yang, Xiaochi Liu, Min Sup Choi, Faisal Ahmed, Chang Ho Ra, and Won Jong Yoo |
¼Ò¼Ó: SKKU Advanced Institute of Nano-Technology (SAINT), Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University |
WP1-19 |
³í¹®Á¦¸ñ: Inductively Coupled Plasma Reactive Ion Etching of Ru Thin Films Using CH4/O2/Ar Gas Mixture |
ÀúÀÚ: Su Min Hwang, Adrian Adalberto Garay, and Chee Won Chung |
¼Ò¼Ó: Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University |
C. Materials Growth & Characterization ºÐ°ú |
TP1-10 |
³í¹®Á¦¸ñ: Effect of p-AlGaN Electron Blocking Layer on Efficiency Droop and Identification of the Dominant Mechanism for the Droop in InGaN/GaN MQW LEDs |
ÀúÀÚ: Nan-Cho Oh, Hye-Jung Yu, Tae-Soo Kim, and Jung-Hoon Song |
¼Ò¼Ó: Department of Physics, Kongju Nat'l University |
TP1-14 |
³í¹®Á¦¸ñ: Variation of Electrical Characteristics in AlGaN/GaN Schottky Diode with Graphene/Ni/Au Electrodes via Plasma Treatments |
ÀúÀÚ: Yoonhyung Kim and Jinsub Park |
¼Ò¼Ó: Department of Electronics & Computer Engineering, Hanyang University |
D. Thin Film Process Technology ºÐ°ú |
TP1-23 |
³í¹®Á¦¸ñ: The Effects of Plasma Frequency on High-k Film Properties
in Plasma Enhanced Atomic Layer Deposition |
ÀúÀÚ: Il-Kwon Oh1, Chang-Mo Yoon1, Gilsang Yoo1,2, Changwan Lee1, Tae Hyung Kim3, Geun Young Yeom3, Hyungjun Kim1, and Han-Bo-Ram Lee4 |
¼Ò¼Ó: 1School of Electrical and Electronic Engineering, Yonsei University, 2Samsung Electronics Co., LTD. 3Department of Advanced Materials Engineering, Sungkyunkwan University, 4Department of Material Science Engineering, Incheon National University |
TP1-32 |
³í¹®Á¦¸ñ: The Study on Increment of Non-Lattice Oxygen Defects by O2/Ar Ratio Variation in Sputtered HfO2 |
ÀúÀÚ: Heedo Na, Jinho Oh, Jimin Lee, Kyumin Lee, and Hyunchul Sohn |
¼Ò¼Ó: Department of Materials Science and engineering, Yonsei University |
TP1-37 |
³í¹®Á¦¸ñ: Reaction Mechanism Study on Atomic Layer Deposition of Silicon Nitride Films Using Silicon Chlorides and Ammonia |
ÀúÀÚ: Jae-Min Park, Luchana L. Yusup, Byeol Han, and Won-Jun Lee |
¼Ò¼Ó: Department of Nanotechnology and Advanced Materials Engineering, Sejong University |
TP1-40 |
³í¹®Á¦¸ñ: Interface Sulfur Passivation using H2S Pre-Deposition Annealing for Atomic-¤Óyer-Deposited HfO2 Film on Ge Substrate |
ÀúÀÚ: Taejun Seok, Hyunsoo Jin, and Tae Joo Park |
¼Ò¼Ó: Department of Materials Science and Engineering, Hanyang University |
E. Compound Semiconductors ºÐ°ú |
WP2-7 |
³í¹®Á¦¸ñ: Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate |
ÀúÀÚ: Hyung Sup Yoon, Byoung Gue Min, Ho Kyun Ahn, Jong Min Lee, Dong Min Kang, Sung Il Kim,
Chul Won Ju, Hae Cheon Kim, and Jong Won Lim |
¼Ò¼Ó: RF Convergence Components Research Section, IT Components & Materials Research Laboratory, Electronics and Telecommunications Research Institute |
WP2-14 |
³í¹®Á¦¸ñ: Investigation of Electrical Performance Degradation in p-AlGaN Gate Heterostructure Field Effect Transistors under Various Off-Stress Conditions |
ÀúÀÚ: Hyo-Seung Choi1, Hun Jeong1, Seung Yup Jang2, Hong Chang Yeoh3, Sang-Hun Song1, and Hyuck-In Kwon |
¼Ò¼Ó: 1School of Electrical and Electronics Engineering, Chung-Ang University, 2MHS Team, System IC R&D Laboratory, LG Electronics, 3Analog Devices Inc. |
WP2-15 |
³í¹®Á¦¸ñ: Interface Engineering for InGaAs MIS Capacitor with Al2O3 Employing PEALD-SiNx as an Interfacial Layer |
ÀúÀÚ: Myoung-Jin Kang, Min-Seok Kim, and Kwang-Seok Seo |
¼Ò¼Ó: Department of Electrical Engineering and Computer Science, Seoul National University |
F. Silicon Device and Integration Technology ºÐ°ú |
TP1-45 |
³í¹®Á¦¸ñ: Nano Imprint·Î Çü¼ºµÈ Synaptic ¼ÒÀÚ ¹× Spike Time Dependent Plasticity (STDP) Ư¼º Æò°¡ |
ÀúÀÚ: Youngin Gil and Changhwan Choi |
¼Ò¼Ó: Division of Materials Science and Engineering, Hanyang University |
G. Device & Process Modeling, Simulation and Reliability ºÐ°ú |
WP2-24 |
³í¹®Á¦¸ñ: Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET |
ÀúÀÚ: Hyunsoo Kim, Sung-Won Yoo, Youngsoo Seo, and Hyungcheol Shin |
¼Ò¼Ó: Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
WP2-25 |
³í¹®Á¦¸ñ: The Comparison of Electrical Characteristics Between Nanoplate Fet and FinFET for 5 nm node Technology |
ÀúÀÚ: Duckseoung Kang, Jong-su Kim, and Hyungcheol Shin |
¼Ò¼Ó: Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
WP2-31 |
³í¹®Á¦¸ñ: Effects of Oxygen Adatoms on the Atomic and Electronic Structures of Various Ge Surfaces by Ab-Initio Study |
ÀúÀÚ: Liu Kai1,2, Cheol Seong Hwang2, and Jung-Hae Choi1 |
¼Ò¼Ó: 1Electronic Materials Research Center, Korea Institute of Science and Technology, 2Department of Materials Science and Engineering, Seoul National University |
H. Display and Imaging Technologies ºÐ°ú |
TP1-52 |
³í¹®Á¦¸ñ: Structure and Electrical Properties of Nitrogen Doped ZnO Thin Film by Atomic Layer Deposition |
ÀúÀÚ: ±è¼öÇö, ÆíÁ¤ÁØ, Á¶Ã¶Áø, ±è¼º±Ù, ±èÁø»ó |
¼Ò¼Ó: Çѱ¹°úÇбâ¼ú¿¬±¸¿ø ÀüÀÚÀç·á¿¬±¸¼¾ÅÍ |
TP1-54 |
³í¹®Á¦¸ñ: Electrochromic Mirror using Viologen-Anchored Nanoparticle |
ÀúÀÚ: Han Na Kim1,2, Seong-Mok Cho1, Chil Seong Ah1, Juhee Song1, Hojun Ryu1, and Tae-Youb Kim1,2 |
¼Ò¼Ó: 1ETRI, 2University of Science and Technology |
I. MEMS & Sensor Systems ºÐ°ú |
WP1-24 |
³í¹®Á¦¸ñ: ¹Î°¨µµ Çâ»óÀ» À§ÇÑ NDIR [CO] _2Sensor ¿¬±¸ |
ÀúÀÚ: Minki Woo, Sang Wook Han, and Sung Moon |
¼Ò¼Ó: Korea Institute of Science and Technology |
WP1-37 |
³í¹®Á¦¸ñ: Surface Potential Characterization of Original and Regrown Amyloid Fibrils |
ÀúÀÚ: Wonseok Lee1, Hyungbeen Lee1, Myeonggu Son1, Gyudo Lee1, Sang Woo Lee1, and Dae Sung Yoon2 |
¼Ò¼Ó: 1Department of Biomedical Engineering, Yonsei University, 2School of Biomedical Engineering, Korea University |
WP1-43 |
³í¹®Á¦¸ñ: Taste Sensor based on Cascoded Compatible Lateral Bipolar Transistor (C-CLBT) for Detection of Sweetness |
ÀúÀÚ: Jin-Bum Kwon, Hyun-Min Jeong, Sang-Won Lee, Jae-Sung Lee, Hyurk-Choon Kwon, and Shin-Won Kang |
¼Ò¼Ó: School of Electronics Engineering, College of IT Engineering, Kyungpook National University |
WP1-44 |
³í¹®Á¦¸ñ: Fabrication of Silicon Microlens Array on Flexible Substrates using a Transfer Printing |
ÀúÀÚ: Hyungi Park, Myunggyu Shin, and Young Min Song |
¼Ò¼Ó: Department of Electronic Engineering, Pusan National University |
WP1-50 |
³í¹®Á¦¸ñ: Flexible One Diode-One Block Copolymer Incorporated Phase Change Memories Array on Plastic Substrates |
ÀúÀÚ: Beom Ho Mun, Byoung Kuk You, Se Ryeun Yang, Hyeon GyunYoo, Myunghwan Byun, Yeon Sik Jung, and Keon Jae Lee |
¼Ò¼Ó: Department of Materials Science and Engineering, KAIST |
J. Nano-Science & Technology ºÐ°ú |
WP1-56 |
³í¹®Á¦¸ñ: Photoresponse Characteristics of MoS2 Field Effect Transistors under Gate-Bias Stress Conditions |
ÀúÀÚ: Kyungjune Cho, Tae-Young Kim, Woanseo Park, and Takhee Lee |
¼Ò¼Ó: Department of Physics and Astronomy, Seoul National University |
WP1-62 |
³í¹®Á¦¸ñ: Top Gate Graphene FETÀÇ Fermi level°ú °è¸é°áÇÔ ¹ÐµµÀÇ »ó°ü°ü°è ¿¬±¸ |
ÀúÀÚ: Á¤¿íÁø, ±èÀ±Áö, ±è¿ëÈÆ, ±è¼Ò¿µ, À̺´ÈÆ |
¼Ò¼Ó: Center for Emerging Electric Devices and Systems, School of Material Science and Engineering, Gwangju Institute of Science and Technology |
TP1-59 |
³í¹®Á¦¸ñ: Mutual Interaction Observed in Hydrothermal Growth of One-Dimensional ZnO Nanorod Arrays |
ÀúÀÚ: Jung Min Lee, Won Woo Lee, Sungwoong Kim, Su Han Kim, and Won Il Park |
¼Ò¼Ó: Division of Materials Science and Engineering, Hanyang University |
TP1-63 |
³í¹®Á¦¸ñ: Inorganic-based Flexible Electronics for System on Plastic |
ÀúÀÚ: Hyeon Gyun Yoo, Seungjun Kim, and Keon Jae Lee |
¼Ò¼Ó: Department of Materials Science and Engineering, KAIST |
TP1-68 |
³í¹®Á¦¸ñ: Inkjet-Printed Source/Drain Contact for Solution-Processed Single-Walled Carbon Nanotube Thin-Film Transistors |
ÀúÀÚ: Hyeonggyu Kim, Taehoon Kim, Narkhyeon Seong, Jewook Ha, and Yongtaek Hong |
¼Ò¼Ó: Department of Electrical and Computer ngineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University |
K. Memory (Design & Process Technology) ºÐ°ú |
WP2-53 |
³í¹®Á¦¸ñ: Programming Pulse Width Variation and Its Microstructural Model of Phase-Change Memory |
ÀúÀÚ: Gwihyun Kim, Sanghyeon Lee, and Seung Jae Baik |
¼Ò¼Ó: Department of Electrical, Electronic, and Control Engineering, Hankyong National University |
WP2-54 |
³í¹®Á¦¸ñ: Influence of Electron and Hole Distribution on Embedded SONOS Nonvolatile Memory |
ÀúÀÚ: Da Som Kim1, Tae Ho Lee2, Young Jun Kwon2, Jae Gwan Kim2, Sung Kun Park2, In Wook Cho2, Kyung Dong Yoo2, Gyu Han Yun1, and Woo Young Choi1 |
¼Ò¼Ó: 1 Department of Electronic Engineering, Sogang University, 2System IC Division, SK Hynix Inc. |
L. Analog Design ºÐ°ú |
WP2-56 |
³í¹®Á¦¸ñ: A 1-Gb/s Digital Transmitter with 3-tap FIR Pre-Emphasis in 0.13-um CMOS |
ÀúÀÚ: Chaerin Hong, Kyungmin Lee, Xiao Ying, Hanbyul Choi, Seung-Hoon Kim, and Sung Min Park |
¼Ò¼Ó: Department of Electronics Engineering, Ewha Womans University |
WP2-63 |
³í¹®Á¦¸ñ: Portable Sensor Platform using Constant Current Source |
ÀúÀÚ: Yongjun Hwang, Seongwook Choi, Sangwoo Lee, and Youngjune Park |
¼Ò¼Ó: Department of Electrical and Computer Engineering, Seoul National University |
N. VLSI CAD ºÐ°ú |
WP2-67 |
³í¹®Á¦¸ñ: Event-Driven Simulation of Input-Dependent Nonlinear Behaviors |
ÀúÀÚ: Jieun Jang and Jaeha Kim |
¼Ò¼Ó: Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University |
O. System LSI Design ºÐ°ú |
WP1-64 |
³í¹®Á¦¸ñ: High-Speed Baseband Modem for 60 GHz Proximity Wireless Communications |
ÀúÀÚ: Ik-Jae Chun1, Hoo-Sung Lee1, Moon-Sik Lee1, and Ji-Hoon Kim2 |
¼Ò¼Ó: 1Wireless Proximity Communications Research Section, ETRI, 2Division of Electrical and Information Technology Engineering, Chungnam National University |
P. Device for Energy ºÐ°ú |
WP2-70 |
³í¹®Á¦¸ñ: Chemically-Sintered, Binder-Free TiO2 Films for Low-Temperature Photoelectrodes |
ÀúÀÚ: Jaewon Jang and Moon-Ho Ham |
¼Ò¼Ó: School of Materials Science and Engineering, Gwangju Institute of Science and Technology |
WP2-79 |
³í¹®Á¦¸ñ: Enhanced Field-Effect Passivation Performance of Atomic-Layer-Deposited Al2O3 Layer for Si Nanostructured Solar Cells using Interface S Incorporation |
ÀúÀÚ: Daewoong Kim1, Jaewon Song2, Jung-Ho Lee2, and Tae Joo Park1 |
¼Ò¼Ó: 1Department of Materials Science and Engineering, Hanyang University, 2Department of Chemical Engineering, Hanyang University |
Q. Metrology, Inspection, and Yield Enhancement ºÐ°ú |
TP1-74 |
³í¹®Á¦¸ñ: Wafer Defect Inspection using Component Tree of SEM Images |
ÀúÀÚ: Sunghyon Kim1, Minwoo Kim2, and Il-seok Oh1,2 |
¼Ò¼Ó: 1Department of Nano Technology, Chonbuk National University, 2Department of Computer Engineering Graduate School, Chonbuk National University |
TP1-80 |
³í¹®Á¦¸ñ: ÀüÀÚ ºöÀ» ÀÌ¿ëÇÑ ¹Ì¼¼ ¿ÀÁ¤·Ä °èÃø ½Ã½ºÅÛ |
ÀúÀÚ: ±èÇüº¹1, ¹Ú¹Î¿õ1, Á¶ÁßÈÖ1, °¸íÁÖ2, ¿À½Âö3 |
¼Ò¼Ó: 1ÀÎõ´ëÇб³, 2¼¿ï´ëÇб³, 3¿À·Î½ºÅ×Å©³î·ÎÁö |
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