Special Session
Program > Special Session
• Title: 2014 International Symposium on Next Generation Terabit Memory Technology
• Date & Time: Feb. 26, 2014 (Wed.) / 09:00 ~ 17:10
• Place: 6F HIT building, Hanyang University
2014 International Symposium on Next Generation Terabit Memory Technology
Program
6th Floor, HIT Building, Hanyang University, Seoul 26-Feb-14
08:30 - 09:00 Registration
09:00 - 09:10 Opening Remark
Mr. Jeong-Il Kim (MOTIE)
Chairperson : Prof. Jong-Ho Lee
Plenary Talk I 09:10 - 09:30 "Challenges and Prospectives of STT-MRAM and PRAM"
Dr. Yoonjong Song (Samsung Electronics Co., Ltd., Korea)
Plenary Talk II 09:30 - 09:50 "RRAM Potentials and Challenges for High Density Application"
Dr. Soo-Ock Chung (SK Hynix, Korea)
3D Tunneling
Flash Memory
09:50 -10:40 "Innovative 3D NAND Flash Devices for New Applications"
Dr. Hang-Ting Lue (Macronix International Co., Ltd.,Tiwan)
10:40- 11:00 Coffee Break
PoRAM 11:00 - 11:50 "Organic Synapstor for Unconventional Computing and Biocompatible Applications."
Dr. Dominique Vuillaume (CNRS, France)
12:00 - 13:30 Lunch
Chairperson : Prof. Jin-Pyo Hong 
ReRAM 13:30 - 14:20 "Towards Storage Class Memory: Access Devices for 3-D
Crosspoint using Mixed-Ionic-Electronic-Conduction (MIEC)"
Dr. Geoffrey W. Burr (IBM, USA)
PCRAM 14:20 - 15:10 "Reconsideration of Switching Energy in PRAM, and a Proposal for
Entropy-Controlled PRAM with Topological Insulating and Spintronics Functions"
Dr. Junji Tominaga (AIST, Japan)
15:10 - 15:30 Coffee Break
STT-MRAM 15:30 - 16:20 "Development of Novel Materials for Ultrahigh-Density STT-MRAM Application"
Dr. Kay YAKUSHIJI (AIST, Japan)
STT-MRAM 16:20- 17:10 "STT-MRAM with Perpendicular MTJ, the Progresses and Prospects for Further Scalability"
Dr. Hiroaki Yoda (Toshiba, Japan)
17:40 - 17:50 Closing Remark
* The speakers will be selected by the recommendation from Samsung and Hynix.