2014 International Symposium on
Next Generation Terabit Memory Technology |
Program |
6th Floor, HIT Building, Hanyang University, Seoul |
26-Feb-14 |
|
08:30 - 09:00 |
Registration |
09:00 - 09:10 |
Opening Remark Mr. Jeong-Il Kim (MOTIE) |
Chairperson : Prof. Jong-Ho Lee |
Plenary Talk I |
09:10 - 09:30 |
"Challenges and Prospectives of STT-MRAM and PRAM"
Dr. Yoonjong Song (Samsung Electronics Co., Ltd., Korea) |
Plenary Talk II |
09:30 - 09:50 |
"RRAM Potentials and Challenges for High Density Application"
Dr. Soo-Ock Chung (SK Hynix, Korea) |
3D Tunneling
Flash Memory |
09:50 -10:40 |
"Innovative 3D NAND Flash Devices for New Applications" Dr. Hang-Ting Lue (Macronix International Co., Ltd.,Tiwan) |
10:40- 11:00 |
Coffee Break |
PoRAM |
11:00 - 11:50 |
"Organic Synapstor for Unconventional Computing and Biocompatible Applications."
Dr. Dominique Vuillaume (CNRS, France) |
12:00 - 13:30 |
Lunch |
Chairperson : Prof. Jin-Pyo Hong |
ReRAM |
13:30 - 14:20 |
"Towards Storage Class Memory: Access Devices for 3-D
Crosspoint using Mixed-Ionic-Electronic-Conduction (MIEC)"
Dr. Geoffrey W. Burr (IBM, USA) |
PCRAM |
14:20 - 15:10 |
"Reconsideration of Switching Energy in PRAM, and a Proposal for
Entropy-Controlled PRAM with Topological Insulating and Spintronics Functions" Dr. Junji Tominaga (AIST, Japan) |
15:10 - 15:30 |
Coffee Break |
STT-MRAM |
15:30 - 16:20 |
"Development of Novel Materials for Ultrahigh-Density STT-MRAM Application"
Dr. Kay YAKUSHIJI (AIST, Japan) |
STT-MRAM |
16:20- 17:10 |
"STT-MRAM with Perpendicular MTJ, the Progresses and Prospects for Further Scalability"
Dr. Hiroaki Yoda (Toshiba, Japan) |
17:40 - 17:50 |
Closing Remark |