[D_1041] Decreasing Interfacial Layers of The Ferroelectric Hf0.5Zr0.5O2 Film Capacitors by Wake-Up Effect
Ȳ¼®¿ø (°í·Á´ëÇб³) ÀÎÅÍºä º¸·¯°¡±â[J_1050] 'Transient Electronics': Biocompatible/Biodegradable Electronic Devices Dissolve in Body, Environment
[G_1025] Calculation Method for Negative Bias Illumination Stress-induced Instability in Amorphous IGZO Thin-Film Transistors
ÀÌ¿ë¼· (SKÇÏÀ̴нº) ÀÎÅÍºä º¸·¯°¡±â[K_1027] Design of Embedded ReRAM Macros for 40nm Logic Process
[A_1004] Fully-Packaged Ultrathin Si-based Flexible NAND Flash Memory
¹ÚÀ±ÁÖ (ÀÌÈ¿©ÀÚ´ëÇб³)[R_1019] A Context-aware Page Replacement Policy for PCM-based Swap Devices
[F_1025] Strained Ge Light Emitter on Ge-on-Dual Insulators?for Improved Thermal Conduction and Optical Insulation
ÃÖÈñö (ÀÎõ´ëÇб³)[Q_1025] Deep LearningÀ» ÀÌ¿ëÇÑ TSOM À̹ÌÁö °èÃø
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ÀÌÀçÈÆ (°æÈñ´ëÇб³)[M_1001] A Low-power Self-calibrated System Clock Generator for Class-1 Generation-2 UHF-band RFID Tag IC
[B_1029] Controlled MoS2 Layer Etching and Plasma Treatment
°¸íÁø (¼¿ï´ëÇб³)[E_1039] Improvement in Transconductance and Hysteresis of E-mode AlGaN/GaN MIS-HEMTs with Cat-CVD SiNx as Gate Insulator